Tianma Micro-electronics Co., Ltd.

Nlt Technologies, Ltd.

Tianma Japan, Ltd.

Mutsuto Katoh

Kazushige Takechi

Shinnosuke Iwamatsu

Toru Yahagi

Yutaka Abe

Shunsuke Konno

Yutaka Murakami

An electrostatic sensing device includes a sensor oxide semiconductor TFT, and a controller configured to control the sensor oxide semiconductor TFT. The sensor oxide semiconductor TFT includes an oxide semiconductor active layer, a source electrode connected with the oxide semiconductor active layer, a drain electrode connected with the oxide semiconductor active layer, a gate electrode behind the oxide semiconductor active layer, and a gate insulating layer between the gate electrode and the oxide semiconductor active layer The controller is configured to measure a difference from a reference current of a current flowing between the source electrode and the drain electrode, while applying a driving voltage to the gate electrode, and determine polarity of electrostatic charge of the measurement target based on direction of the difference from the reference current.

Electrostatic sensing device

A TFT biosensor includes a gate electrode (silicon substrate), a reference electrode, and enzyme that is fixed to an insulating substrate spatially separated from the gate electrode and the reference electrode. A pH variation in the vicinity of an ion-sensitive insulating film is induced by a reaction between the enzyme and a sensing object material. The TFT biosensor can detect a concentration of the sensing object material with high sensitivity by detecting the pH variation as a threshold voltage shift of characteristics of a gate-source voltage to a source-drain current.

Biosensor and detection device

Growing community of inventors

Yamagata, Japan

Mutsuto Katoh