Semiconductor Energy Laboratory Co., Ltd.

Mutsuo Yamamoto

Minoru Miyazaki

Akane Murakami

Baochun Cui

Yasuhiko Takemura

Hongyong Zhang

Toru Takayama

Satoshi Teramoto

Masaaki Hiroki

Toshimitsu Konuma

Hideki Uochi

Naoaki Yamaguchi

Masamitsu Hiroki

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 &#x212b;, e.g., between 100 and 750 &#x212b;. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

Electronic circuit including pixel electrode comprising conductive film

Electronic circuit

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 &#x212b;, e.g., between 100 and 750 &#x212b;. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

An amorphous semiconductor film comprising silicon is provided with a metal element which is capable of promoting a crystallization of silicon. Then, the semiconductor film is crystallized by hating at a relatively low temperature. After introducing impurity ions into source and drain regions of the semiconductor film, the source and drain regions are recrystallized by heating. During the recrystallization, the channel region having crystallinity functions as crystalline nuclei. Accordingly, it is possible to avoid defects occurring in the boundary regions between the channel region and source/drain regions.

Method of manufacturing an active matrix type device

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 &angst;, e.g., between 100 and 750 &angst;. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

Thin film transistor having pixel electrode connected to a laminate structure

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 &angst;, e.g., between 100 and 750 &angst;. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor

In a thin film transistor (TFT), a part of a surface or a whole surface of aluminum used as a gate electrode is covered by anodic oxide. In a process after anodization process, ultraviolet light is irradiated to a gate electrode in an oxidizing atmosphere containing oxygen, ozone, or nitrous oxide. Or, in a process after anodization process, a TFT is leaved (placed) in plasma in an oxidizing atmosphere. Or, ultraviolet light is irradiated to a gate electrode in plasma in an oxidizing atmosphere. A substrate temperature is a room temperature (50&deg; C.) to 500&deg; C., for example, 200 to 300&deg; C. By ultraviolet light irradiation or plasma processing, metallic aluminum contained in anodic oxide is oxidized.

Method for manufacturing thin film transistor

A method of manufacturing a semiconductor device includes process of introducing a material for promoting crystallization of an amorphous semiconductor film, crystallizing the amorphous semiconductor film to form a crystalline semiconductor film, introducing phosphorus to form a source region, a drain region, a pair of light doped regions and a channel region being defined between the pair of the light doped region, heating the crystalline semiconductor film so that the material is diffused from the channel region to each of the source and drain regions through each of the pair of light doped region.

Method for manufacturing thin-film transistors

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

In a thin film transistor (TFT), a part of a surface or a whole surface of aluminum used as a gate electrode is covered by anodic oxide. In a process after anodization process, ultraviolet light is irradiated to a gate electrode in an oxidizing atmosphere containing oxygen, ozone, or nitrous oxide. Or, in a process after anodization process, a TFT is leaved (placed) in plasma in an oxidizing atmosphere. Or, ultraviolet light is irradiated to a gate electrode in plasma in an oxidizing atmosphere. A substrate temperature is a room temperature (50.degree. C.) to 500.degree. C., for example, 200.degree. to 300.degree. C. By ultraviolet light irradiation or plasma processing, metallic aluminum contained in anodic oxide is oxidized.

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

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Kanagawa, Japan

Mutsuo Yamamoto