Tohoku University

Mitsubishi Chemical Corporation

The Japan Steel Works, Ltd.

Japan Steel Works M&e, Inc.

Mutsuo Ueda

Shigefusa Chichibu

Quanxi Bao

Makoto Saito

Rinzo Kayano

Yuji Kagamitani

Tohru Ishiguro

Chiaki Yokoyama

Daisuke Tomida

Kouhei Kurimoto

Toru Ishiguro

Yuji Sasagawa

Masaya Morimoto

A pressure container for crystal production having excellent corrosion-resistance is provided. This pressure container produces crystals within the container using a seed crystal, a mineralizer, a raw material, and ammonia in a supercritical state or a subcritical state as a solvent. The pressure container has Ag present over the entire surface of at least the inner surface thereof in contact with the solvent. The Ag can be disposed by one or a combination of two or more among, for instance, Ag lining, Ag welding, and Ag plating. The mineralizer is preferably a fluorine mineralizer containing no halogen atoms other than fluorine.

Pressure container for crystal production

A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

Method for producing nitride single crystal using nitrogen-containing solvent, mineralizer having fluorine atom, and raw material

Method for producing nitride single crystal

Growing community of inventors

Hokkaido, Japan

Mutsuo Ueda