Fuji Electric Co., Ltd.

Fujitsu Ten Limited

Fuji Electric Device Technology Co., Ltd.

Fuki Electric Co., Ltd.

Mutsuo Nishikawa

Katsumichi Ueyanagi

Kazuhiro Matsunami

Katsuyuki Uematsu

Mitsuo Sasaki

Kazunori Saito

Yuko Fujimoto

Katsuya Karasawa

Shiho Katsumi

Katsumichi Uayanagi

Akio Kitamura

Kimihiro Ashino

Shigeru Shinoda

Katsuhiro Shimazu

Keiichi Ito

Hirofumi Kato

Toshiaki Kaminaga

Masahide Hayashi

Kazuhiko Ikoma

Ryohei Uzawa

Provided is a semiconductor circuit connected to a load circuit and configured to control power supply to the load circuit, comprising: a power line to which a power voltage is applied; an overvoltage protection unit that has an output unit configured to interrupt power supply from the power line to the load circuit when the power voltage in the power line is overvoltage; and a state notification unit configured to notify the outside of a state signal indicating whether the output unit is interrupting the power supply.

In-vehicle semiconductor circuit and semiconductor circuit

It is desired to further reduce output errors which are caused by temperature characteristics. A sensor device is provided which includes a sense circuit which outputs a sense signal according to a magnitude of a detected physical quantity, an amplifier circuit which amplifies the sense signal, and a switching unit which switches at least one of a sensitivity of the sense circuit and an offset of the amplifier circuit discontinuously according to whether a temperature measurement value exceeds a threshold value.

Sensor device configured to reduce output errors due to temperature characteristics

A pressure sensor for detecting pressure is provided. A pressure sensor including: a sensor portion that is provided in a diaphragm in a substrate; a circuit portion that is provided on the substrate and electrically connected to the sensor portion; a pad of conductivity that is provided above the substrate; and a first protective film that is provided on the pad, wherein the first protective film is also provided above the circuit portion, is provided. The first protective film may cover the circuit portion entirely. The first protective film may not cover at least part of the sensor portion. The first protective film may cover part of the sensor portion.

Pressure sensor

A semiconductor sensing device generates an output based on a sensor. A connection point of an output circuit constituted by first and second switching output elements connected so as to be complementary is connected to an output terminal. Between the first switching output element and the connection point of the output circuit, a first switching element is connected. Between the second switching output element and the connection point of the output circuit, a second switching element is connected. When voltage of the output terminal is a voltage lower than a lower limit clamp voltage, the first switching element turns OFF. When the voltage of the output terminal is a voltage higher than an upper limit clamp voltage, the second switching element turns OFF.

Semiconductor sensing device

A protection circuit includes a first PMOS and a first PDMOS receiving input of voltage of a voltage dividing point of voltage input from an external power supply terminal, and a second PMOS and a second PDMOS receiving input of drain output voltage of the first PDMOS. The first PMOS is connected on the external power supply terminal side of the first PDMOS, and the second PMOS is connected on the external power supply terminal side of the second PDMOS. During overvoltage application, the voltage of the voltage dividing point is clamped to the breakdown voltage of a Zener diode, the second PDMOS turns OFF, and supply to an integrated circuit protected from overvoltage is cut off. When the voltage source is connected in reverse, parasitic diodes of the first and second PMOSs are reverse-biased and the flow of current in a path through the parasitic diodes is inhibited.

Semiconductor integrated circuit device

A semiconductor physical quantity sensor device having a power source terminal for receiving a power source potential, a ground terminal for receiving a ground potential, and an output terminal. The semiconductor physical quantity sensor includes a sensor configured to generate a signal, an amplifier configured to amplify the signal, and to output the amplified signal through the output terminal, a first resistor electrically connected between the power source terminal and the amplifier, a second resistor electrically connected between the output terminal and the ground terminal, and a filter electrically connected between the power source terminal and the sensor, and including a third resistor and a capacitor.

Semiconductor physical quantity sensor having filter circuits for blocking electromagnetic wave noise

An analog signal is supplied to a first conversion section of a physical quantity sensor device, converted to digital, and set to be an initial output value of the first conversion section. Adjustment information for the first conversion section is calculated based on the error between the initial output value and a target output value of the first conversion section. Before an initial output value of a physical quantity sensor is measured for calculating initial setting information of a physical quantity sensor device, the first conversion section is adjusted based on the adjustment information. Also, a digital signal is supplied to a second conversion section of the physical quantity sensor device, converted to analog, and set to be an initial output value of the second conversion section. The second conversion section is adjusted based on adjustment information for the second conversion section.

Physical quantity sensor device and method of adjusting physical quantity sensor device

A first acquiring unit acquires initial output values of a physical quantity sensor. A second acquiring unit acquires target output values for the physical quantity sensor. A first calculating unit extracts first characteristic values by calculating a second-order first characteristics formula which indicates corrected output characteristics of the physical quantity sensor, based on the initial output values and target output values of the physical quantity sensor. The second calculating unit extracts second characteristic values by calculating a second-order second characteristics formula for correcting the first characteristic values, based on a predetermined temperature and the first characteristic values. A computing unit computes a corrected output value for the physical quantity sensor based on the first characteristics formula which is corrected by inputting the second characteristic values to the second characteristics formula.

Output value correction method for physical quantity sensor apparatus, output correction method for physical quantity sensor, physical quantity sensor apparatus and output value correction apparatus for physical quantity sensor

On an IC chip, a first ground wiring line and a second ground wiring line that extends from a connection site with the first ground wiring line are disposed in a doubled manner. Among EPROMs storing identical data, the source of a first EPROM is connected to the second ground wiring line and the source of a second EPROM is connected to the first ground wiring line. The drains of the EPROMs are electrically connected to a write voltage line. An OR circuit outputs as 1-bit data of the memory circuit, the logical sum of the data stored by at least two of the EPROMs storing identical data. The EPROMs and the OR circuit are disposed near each other on the IC chip.

Semiconductor integrated circuit device having electrically rewriteable read-dedicated memory

A semiconductor integrated circuit that exhibits an enhanced surge withstand voltage of a nonvolatile memory and has a reduced chip area, having a nonvolatile memory and a Zener diode connected in parallel between a write terminal and a ground terminal. The nonvolatile memory is connected to the write terminal by a write terminal line and to a common connection point by a first ground line. The cathode of the Zener diode is connected to the write terminal line. The anode of the Zener diode is connected to the specified connection point by a second ground line. The first ground line and the second ground line are connected to the specified connection point.

Semiconductor integrated circuit

A semiconductor devicefor sensing a physical quantity adjusts the output characteristic of a pressure sensor, for example, based on trimming data stored in an EPROM. A comparatorcompares an input voltage given to a terminaland a predetermined reference voltage, and delivers a write control signal for EPROM. When the comparatordelivers a Low signal for the EPROM, a first gate circuitprovided between the terminaland a temperature sensorconnects the terminaland the temperature sensor. A second gate circuitprovided between the terminaland a pull-down resistordisconnects the terminaland the pull-down resistor. The operational voltage of the temperature sensoris lower than the reference voltage, and the terminalis used as an output terminal for the temperature sensor

Semiconductor device for sensing physical quantity

A semiconductor device has a plurality of first opening portions formed in an interlayer insulating film. The surface is covered with a metal film with a surface having concavities and convexities which scatter reflected light. Size of the first opening portion is of the same level as a contact hole of a component and cannot be recognized by an image recognition apparatus. The metal film can be recognized by the image recognition apparatus. By forming a TiN film serving as a reflection prevention film on an end of the metal film, portions that can easily scatter light and a portion that cannot easily reflect light are adjacent in an alignment marker. A passivation film is formed on the interlayer insulating film and the TiN film. Recessed portions disposed in the metal film are exposed to a second opening portion formed in the passivation film and the TiN film.

Semiconductor device and method of manufacturing semiconductor device

Aspects of a semiconductor pressure sensor device can include a semiconductor substrate having a depressed portion which forms a vacuum reference chamber, a diaphragm disposed on the front surface of the semiconductor substrate, and strain gauge resistors. The device can further include an aluminum wiring layer disposed on the semiconductor substrate, an antireflection film which is a TiN film disposed on the aluminum wiring layer, an adhesion securing and diffusion preventing layer which is a film stack of a Cr film and Pt film disposed on the TiN film, and an Au film stacked on the adhesion securing and diffusion preventing layer.

Semiconductor pressure sensor device and method of manufacturing the same

In aspects of the invention, an auxiliary memory circuit includes a shift register wherein a plurality of flip-flops are cascade-connected and a plurality of inversion circuits that invert and output outputs of each D flip-flop. A main memory circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and an EPROM connected in series to the switch and driven by a writing voltage. A variable resistance circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and a resistor connected in series to the switch. With aspects of the invention, it is possible for terminals of the writing voltage and a writing voltage to be commonized. Also, it is possible to provide a low-cost semiconductor physical quantity sensor device that can carry out electrical trimming with the voltage when writing into the EPROM kept constant.

Semiconductor integrated circuit and semiconductor physical quantity sensor device

Provided by some aspects of the invention is a relatively low-cost, relatively highly accurate physical quantity sensor, and a manufacturing method thereof, that relaxes thermal stress from an outer peripheral portion of a diaphragm in a silicon-on-nothing ('SON') structure. By providing a stress relaxation region (trench groove) in an outer peripheral portion of a diaphragm in a SON structure, there can be, in some aspects of the invention, a benefit of relaxing the transmission to the diaphragm of thermal stress generated by the difference in linear expansion coefficient between a package and chip, and it is possible to relax the transmission to an electronic circuit disposed in an outer peripheral portion of mechanical stress generated by a measured pressure. As a result of this, it is possible to provide a highly accurate physical quantity sensor.

Growing community of inventors

Matsumoto, Japan

Mutsuo Nishikawa