Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Mutsumi Tsuda

Masakazu Taki

Hidetada Tokioka

Hiroki Ootera

Koichi A Ono

Akihiko Furukawa

Takaaki Kawahara

Taisuke Furukawa

Kenyu Haruta

Tomohiro Ikeda

Tomohiro Sasagawa

Kaoru Motonami

Tsuyoshi Horikawa

Seiji Oka

Akihiro Suzuki

Toshiyuki Oishi

Tsuyoshi Kawakami

Minoru Hanazaki

Naohiko Fujino

Kenji Shintani

Shinsuke Yura

Noboru Mikami

Hitoshi Wakata

Kunihiko Nishimura

Kenichi Kuroda

Hideki Yabe

Junji Tanimura

Takayuki Morioka

Akira Yamashita

Tetsuya Takami

Kazuyoshi Kojima

Kazuo Kuramoto

Yasutoshi Yashiki

Yoshio Saito

Yukihiko Wada

Shinya Nishimura

Kouji Kise

Yasushi Fujioka

Atsufumi Inoue

Kazuyuki Fujii

Keisuke Nanba

Akimasa Yuki

Tetsuo Makita

Hiroshi Kuroki

Tetsuo Ogama

Yasuji Matsui

Gen Kawaharada

A technique that ensures proper failure diagnosis of a solar cell string. A failure diagnostic method and a failure diagnostic device of the solar cell string include an impedance measure, an analyzer, and a determination processor. The analyzer obtains the inductance of the solar cell string based on a relational expression containing an impedance, an inductance, and a frequency in a predetermined equivalent circuit of the solar cell string, and the frequency characteristic of the first impedance measured by the impedance measure. The determination processor conducts failure diagnose for the solar cell string based on the inductance obtained by the analyzer.

Failure diagnostic method and failure diagnostic device of solar cell string

A thermoelectric conversion module includes a plurality of thermoelectric conversion elements formed on a first main surface of an inner tube, and a plurality of projections formed on a second main surface of an outer tube. The thermoelectric conversion element includes an interconnection, and an electrode formed at a first distance from the second main surface in a second direction. When the thermoelectric conversion module is seen from a first direction, the projections include a first projection and a second projection formed at a spacing therebetween in a third direction. A shortest distance between a first lateral surface and a top portion of the first projection and a shortest distance between a second lateral surface and a top portion of the second projection are smaller than the first distance.

Thermoelectric conversion module and method of manufacturing the same

A power semiconductor device includes an emitter electrode disposed on a semiconductor substrate and through which a main current flows, a conductive layer that is disposed on the emitter electrode and is not a sintered compact, and a sintered metal layer that is disposed on the conductive layer and is a sintered compact. The sintered metal layer has a size to cover all the emitter electrode in plan view, and has higher heat conductivity than the conductive layer. The power semiconductor device can improve heat dissipation performance and adhesion.

Power semiconductor device

A method for diagnosing a solar cell module includes an analysis of measuring frequency characteristics including a resonance point of impedance between two poles of a solar cell module, and frequency characteristics including a resonance point of impedance between an output cable and a frame, and determining equivalent circuit constants of the solar cell module, and a determination of comparing the equivalent circuit constants determined in the analysis with equivalent circuit constants obtained previously to determine change in condition of the solar cell module.

Method for diagnosing solar cell module, and diagnostic circuit and diagnostic system for solar cell module

An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a Hgas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiHgas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiHgas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.

Apparatus for forming thin film and method of manufacturing semiconductor film

In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.

Manufacturing method of semiconductor integrated circuit device

In a wafer treatment apparatus, a hydrofluoric acid gas supply pipe and an evacuation pipe are connected to a chamber storing a wafer for performing prescribed treatment. A control part is provided for controlling supply of hydrofluoric acid gas. The control part sets a time for supplying the hydrofluoric acid gas into the chamber to be longer than a time up to starting of etching of a reaction product and shorter than a time up to starting of etching of a gate insulator film. Thus, only the reaction product can be substantially etched without etching the gate insulator film.

Method of fabricating a semiconductor device including time-selective etching process

A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.

Thin film forming apparatus using laser

A thin film forming apparatus using a laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting a laser beam to target 5, and a substrate holder (3). When the target is irradiated with a laser beam, a plume (15) is generated, and materials included in plume 15 are deposited on the surface of a substrate (2) held by the substrate holder (3). A magnetic field is generated to direct the plume. The magnetic field can be parallel to the surface of the substrate or in another embodiment a cusp magnetic field can be used (see FIG. 130).

Thin film forming apparatus using laser and magnetic field

A plasma processor comprising a plasma generation portion in which a plasma is generated by electron cyclotron resonance, a source of a right hand polarized microwave and supplying it to the plasma generation portion, and a plasma reaction portion which accommodates a substrate to be processed with the plasma generated in the plasma generation portion. Owing to the production and supply of the right hand polarized microwaves, almost all of the microwaves injected into the plasma generation portion contribute to the generation of the plasma, to increase plasma density and raise processing speed.

Plasma processor

Growing community of inventors

Tokyo, Japan

Mutsumi Tsuda