Hitachi, Ltd.

Hitachi Power Semiconductor Device, Ltd.

Hitachi Haramachi Semi-conductor, Ltd.

Other

Renesas Technology Corp.

Hitachi Automotive Systems, Ltd.

Hitchi, Ltd.

Advanced Pdp Development Center Corporation

Mutsuhiro Mori

Naoki Sakurai

Junichi Sakano

Yasumichi Yasuda

Katsunori Azuma

Shin Kimura

Hideki Miyazaki

Tomoyuki Tanaka

Masamitsu Inaba

Yasunori Nakano

Taiga Arai

Masahiro Iwamura

Masaki Shiraishi

Yoshihiko Koike

Ryuichi Saito

Tetsuya Ishimaru

Takayuki Hashimoto

Kiyoshi Nakata

Masahiro Nagasu

Kenichiro Nakajima

Hideo Kobayashi

Yasuhiko Kohno

Hidetoshi Arakawa

Kinya Nakatsu

Akira Horie

Syuuji Saitoo

Shigeki Sekine

So Watanabe

Katsunori Suzuki

Kenichi Onda

Koji Tateno

Junpei Uruno

Tomoyuki Miyoshi

Tomoyasu Furukawa

Shinichi Kurita

Yujiro Takeuchi

Kohhei Onda

Hiromi Hosoya

Yasumiti Yasuda

Hiroshi Owada

Takashi Naito

Akihiko Kanouda

Keiichi Mashino

Akihiro Miyauchi

Takuya Aoyagi

Hiroshi Suzuki

Jin Onuki

Shinji Shirakawa

Katsuaki Saito

Kenji Hara

Masahiro Masunaga

Masashi Yura

Kazuhiro Oyama

Seiichi Hayakawa

Yoshimasa Takahashi

Takuo Nagase

Koumei Hanaoka

Ryoso Masaki

Tatsumi Yamauchi

Satoshi Shimada

Hiroyuki Ozawa

Nobutake Konishi

Atsuo Watanabe

Kazuo Tahara

Kazuji Yamada

Tadashi Fujieda

Koji Sasaki

Isamu Yoshida

Akitoyo Konno

Toshiaki Morita

Yasuo Matsuda

Kazuhiro Suzuki

Norikazu Tokunaga

Eiichi Ide

Takashi Hirao

Motomune Kodama

Yuichi Sawai

Fusanori Nishikimi

Michiaki Hiyoshi

Seigou Yukutake

Naohiro Momma

Tatsuya Miyake

Masahiko Amano

Hirokazu Inoue

Kozo Sakamoto

Isao Kobayashi

Yasutoshi Kurihara

Shigeru Kikuchi

Takasumi Ohyanagi

Mutsuhiro Terunuma

Taigo Onodera

Yutaka Suzuki

Masanori Tsuchiya

Yosuke Inoue

Toshiki Kurosu

Takashi Nogawa

Shigeru Sugayama

Masatoshi Wakagi

Yusuke Hotta

Yukio Kamita

A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.

Semiconductor device and power conversion device

The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.

A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.

Semiconductor device and alternator using the same

To provide a semiconductor device in which an IGBT having two gate terminals is driven by one control signal, and a continuous ON state and an ON state twice for one on-pulse signal are avoided. A semiconductor device includes: a control signal input terminal; an IGBT having a first gate terminal and a second gate terminal; a delay unit configured to delay an input signal for a delay time; and a logical product unit configured to calculate a logical product of a first input terminal and a second input terminal. The control signal input terminal is connected to an input terminal of the delay unit and a second input terminal of the logical product unit. An output terminal of the delay unit is connected to the first gate terminal of the IGBT and a first input terminal of the logical product unit. An output terminal of the logical product unit is connected to the second gate terminal of the IGBT.

Semiconductor device, method for controlling semiconductor device, and control circuit for semiconductor device

The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.

Semiconductor device, and alternator and power conversion device which use same

An electric power converter () which is provided with a switching element () and a rectifying element () that is connected in series to the switching element (). This electric power converter () has a configuration wherein an external electrical load () is connected to the connection point of the switching element () and the rectifying element (). The switching element () is composed of an insulating gate type semiconductor element that has a first gate terminal () and a second gate terminal (). The rectifying element () is composed of a diode that has a Schottky junction which uses silicon carbide as a semiconductor base. Different driving signals are applied to the first gate terminal () and the second gate terminal (), respectively.

Electric power converter

A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.

Rectifier including MOSFET and hold circuit that boosts gate voltage of MOSFET, and alternator using the same

A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

Heat-dissipating structure and semiconductor module using same

An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.

Apparatus for controlling insulating gate-type semiconductor element, and power conversion apparatus using apparatus for controlling insulating gate-type semiconductor element

An anode electrode and a cathode electrode formed on a silicon semiconductor substrate, p-type layer formed next to the anode electrode, an n-type layer formed next to the cathode electrode by a V-group element being diffused, an nlayer formed between the p-type layer and the n-type layer, and an n-buffer layer formed between the nlayer and the n-type layer and containing oxygen are provided and an oxygen concentration in an area of a width of at least 30 &#x3bc;m from a surface on a side of the n-type layer of the cathode electrode toward the anode electrode is set to 1&#xd7;10cmor more and also the oxygen concentration of the nlayer in a position in contact with the p-type layer is set to less than 3&#xd7;10cm.

Semiconductor device, method for manufacturing the same, and power conversion system

A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.

Rectification device, alternator, and power conversion device

Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected. The source electrode of the MOSFET chip and the second external electrode are connected.

Semiconductor device, and alternator and power converter using the semiconductor device

A semiconductor device is provided that can prevent a current from being concentrated into a specific chip, and can reduce loss as well as noise. The semiconductor device according to the present invention includes: a switching element; a main diode that is connected in parallel to the switching element; and an auxiliary diode that is connected in parallel to the switching element and has a different structure from that of the main diode, wherein in a conductive state a current flowing through the auxiliary diode is smaller than that through the main diode, and in a transition period from the conductive state to a non-conductive state a current flowing through the auxiliary diode is larger than that through the main diode.

Semiconductor device and power converter using the same

The present invention provides a switching device () for power conversion in which a first gate electrode (), a p-type channel layer () having an n-type emitter region (), a second gate electrode (), and a p-type floating layer () are repeatedly arranged in order on the surface side of an n-type semiconductor substrate (). An interval a between the two gates () that sandwich the p-type channel layer () is configured to be smaller than an interval b between the two gates () that sandwich the p-type floating layer (). The first gate electrode () and the second gate electrode () are both supplied with drive signals having a time difference in drive timing.

Switching device for power conversion and power conversion device

Growing community of inventors

Mito, Japan

Mutsuhiro Mori