Jsr Corporation

Mutsuhiko Yoshioka

Hisao Igarashi

Hitoshi Fujiyama

Kazuo Inoue

Eiji Hayashi

Katsumi Sato

Atsushi Shiota

Kinji Yamada

Michinori Nishikawa

Norihiko Ikeda

Manabu Sekiguchi

Kouji Sumiya

Matthias Patz

A sheet-like probe and a method of producing the probe. In the probe electrode structure bodies do not come out from an insulation film and achieve high durability, and in a burn-in test for a wafer having a large area and for a circuit device having to-be-inspected electrodes with small intervals, positional displacement, caused by temperature variation, between the electrode structure bodies and the to-be-inspected electrode can be reliably prevented for stable connection conditions. The sheet-like probe includes an insulation layer and a contact film provided with electrode structure bodies arranged on the insulation layer to be apart from each other in the surface direction of the insulation layer and penetratingly extend in the thickness direction of the insulation layer. The electrode structure bodies each are composed of a surface electrode section exposed to the front surface of the insulation layer.

Sheet-like probe, method of producing the probe, and application of the probe

A sheet-like probe has a porous film. In the sheet-like probe, a contact film is penetratingly supported at each position of through-holes formed in the porous film, and a peripheral edge of the contact film and the porous film are integrated such that a flexible resin insulation layer is included in a fine hole of the porous film. Electrode structure bodies are supported in a penetrating manner in the insulation layer. Each electrode structure body includes a surface electrode section exposed to the front surface of the insulation layer and projecting from the front surface of the insulation layer, a back surface electrode section exposed to the back surface of the insulation layer, a short-circuit section continuously extending from the base end of the front surface electrode section, penetrating the insulation layer in its thickness direction, and connected to the back surface electrode section, a holding section extending outward, along the front surface of the insulation layer, from the base end section of the front surface electrode section, and a supporting body supporting the insulation layer.

A probe member for wafer inspection having a sheet-like probe, the probe including a frame plate in which openings are formed, and contact films arranged on a front surface of the frame plate so as to close the openings, each of the contact films obtained by arranging, in an insulating film formed of a flexible resin, a plurality of electrode structures, and an anisotropically conductive connector, which is composed of a frame plate, in which a plurality of openings have been formed corresponding to the electrode regions, and a plurality of elastic anisotropically conductive films arranged on and supported by the frame plate so as to close the respective openings, wherein each of the openings of the frame plate in the sheet-like probe have a size for receiving the external shape in a plane direction in the elastic anisotropically conductive film of the anisotropically conductive connector.

Probe member for wafer inspection, probe card for wafer inspection and wafer inspection equipment

An insulation film comprising an organosilicon polymer and an organic polymer such as polyarylene, polyarylene ether, polyimide, and fluororesin is disclosed, wherein the organosilicon polymer has a relative dielectric constant of 4 or less and has a dry etching selection ratio of 1/3 or less to silicon oxide, fluorine-doped silicon oxide, organosilicate glass, carbon-doped silicon oxide, methyl silsesquioxane, hydrogen silsesquioxane, a spin-on-glass, or polyorganosiloxane. The insulation film is used as an etching stopper or a hard mask in a dry etching process of interlayer dielectric films for semiconductors and can produce semiconductors having excellent precision with minimal damages.

Insulation film

A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO, fluorine dope SiO, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.

Stopper for chemical mechanical planarization, method for manufacturing same, and chemical mechanical planarization method

An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising: (A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and (B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.

Growing community of inventors

Chuo-ku, Japan

Mutsuhiko Yoshioka