Fujitsu Corporation

Mutsuaki Kai

Shigetoshi Wakayama

Masato Suga

Hiroyuki Kato

A capacitor has a MOS gate structure in which a gate insulating film is held between a gate terminal and a ground terminal as a dielectric. A switch unit is connected between the gate terminal and a power supply. The ground terminal is connected to a ground. A switch control circuit that switches a state of the switch unit between a conductive state and a nonconductive state is provided. A predetermined voltage and a voltage of the gate terminal are input to a non-inverting input terminal and an inverting input terminal of the switch control circuit, respectively. The switch unit is conductive when the voltage of the gate terminal is higher than the predetermined voltage, and nonconductive when the voltage of the gate terminal is lower than the predetermined voltage.

Semiconductor device including capacitor having decoupling capacity

A multilayer interconnection structure of a semiconductor device includes a first guard ring extending continuously along a periphery of a substrate and a second guard ring extending continuously in the multilayer interconnection structure along the periphery so as to be encircled by the first guard ring and so as to encircle an interconnection pattern inside the multilayer interconnection structure, wherein the first and second guard rings are connected with each other mechanically and continuously by a bridging conductor pattern extending continuously in a band form along a region including the first and second guard rings when viewed in the direction perpendicular to the substrate.

Semiconductor device having a guard ring

Semiconductor chips mounted in a laminated manner on a substrate and a semiconductor integrated circuit device using the semiconductor chips. A predetermined semiconductor chip is selected by chip selection signals from an external unit despite the chips having the same wiring pattern are laminated in a plural number one upon the other. The semiconductor integrated circuit device is fabricated by using such semiconductor chips. The semiconductor chip comprises a plurality of first electrode terminals arranged on a front surface maintaining a predetermined pitch to receive reference signals for producing comparison signals that are to be compared with chip selection signals in a comparator circuit to select a chip, a plurality of second electrode terminals arranged on a back surface opposed to the front surface each being deviated by one pitch from the plurality of the first electrode terminals to output the reference signals input to the first electrode terminals, and connection portions for electrically connecting the first and second electrode terminals that are deviated by the one pitch.

Growing community of inventors

Kawasaki, Japan

Mutsuaki Kai