Centre National De La Recherche Scientifique

Institut National De La Sante Et De La Recherche Medicale

Institut National Des Sciences Appliquees De Lyon

Edf Enr Pwt

Synergies Pour Equipements Micro-electronique Communication Optique Sa

Inserm (institut National De La Sante Et De La Recherche Medicale)

Mustapha Lemiti

Volodymyr Lysenko

Yvon Pellegrin

Nam Le Quang

Tetiana Serdiuk

Yuriy Zakharko

Alain Geloen

Tetyana Nichiporuk

Barbara Bazer-Bachi

The invention relates to a method of detecting the interaction between at least one entity and a dielectric layer containing different electron levels in the energy band gap of the dielectric layer, the method comprising the following steps:

Method for detecting the interaction of at least one entity with a dielectric layer

The present invention relates to a method for preparing, on a silicon wafer, an n+pp+ or p+nn+ structure which includes the following consecutive steps: a) on a p or n silicon wafer (), which includes a front surface () and a rear surface (), a layer of boron-doped silicon oxide (BSG) () is formed on the rear surface () by PECVD, followed by a SiOdiffusion barrier (); b) a source of phosphorus is diffused such that the phosphorus and the boron co-diffuse and in order also to form: on the front surface () of the wafer obtained at the end of step a), a layer of phosphorus-doped silicon oxide (PSG) () and an n+ doped area (); and on the rear surface of the wafer obtained at the end of step a), a boron-rich area (BRL) (), as well as a p+ doped area (); c) the layers of BSG () and PSG () oxides and SiO() are removed, the BRL () is oxidized and the layer resulting from said oxidation is removed. The invention also relates to a silicon wafer having an n+pp+ or p+nn+ structure, which can be obtained by said preparation method, as well as to a photovoltaic panel manufactured from such a silicon wafer.

Method for preparing an N+PP+ or P+NN+ structure on silicon wafers

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Lyons, France

Mustapha Lemiti