Florida International University

Mustafa Karabiyik

Nezih Pala

Arash Ahmadivand

Burak Gerislioglu

Devices and methods for Terahertz (THz) sensing/detection, imaging, spectroscopy, and communication are provided. A graphene-based field effect transistor (FET) can have a quality factor of greater than 400 and a responsivity of at least 400 Volts per Watt. A FET sensor can include a substrate, a gate disposed on the substrate, an insulation layer disposed on the gate and the substrate, a source terminal and a drain terminal disposed on the substrate, and a graphene layer disposed on the insulation layer.

Graphene devices for terahertz detection and emission

Apparatuses and methods for making configurable antennas are provided. An apparatus can include a phase change material (PCM) having a conductive phase and an insulating phase. The PCM can be activated to the conductive phase to produce an antenna structure. Different antenna shapes can be created by selectively inducing regions in the PCM to be conductive. Different antenna shapes can be produced having specific resonance frequencies and radiation patterns to suit the application. The PCM phase change can be induced using selective heat application.

Growing community of inventors

Miami, FL, United States of America

Mustafa Karabiyik