Bae Systems Information and Electronic Systems Integration Inc.

Bae Systems, Inc.

Murty S Polavarapu

Frederick T Brady

Jonathan D Maimon

Nadim F Haddad

Jon Maimon

Andrew T S Pomerene

A device and the process for creating a three-dimensional electronic photonic circuit is disclosed. The process includes fabricating a standard high performance integrated circuit on a high resistivity silicon or a silicon-on-insulator substrate up to and including the passivation layer on top of transistors. Separately, a silicon-on-insulator wafer capped by an oxide layer is fabricated, then the two wafers are joined. The resultant device has photonic process elements (e.g. waveguides and photodetectors) fabricated in the top silicon layer. Continued processing interconnects the transistors and photonic elements with contacts and metallization levels to produces an electronic-photonic integrated circuit.

Three-dimensional electronic photonic integrated circuit fabrication process

A method for implementing a prompt dose mitigating capacitor is disclosed. Initially, a flip chip is provided with multiple capacitors. The flip chip is then placed on top of a substrate having multiple electronic devices connected to a set of power rails. The terminals of the capacitors within the flip chip are subsequently connected to the power rails within the substrate in order to regulate voltages appeared on the power rails during a radiation pulse.

Method for implementing prompt dose mitigating capacitor

In integrated circuit that yields the advantages of contemporary processing technologies and yet is irreparably damaged by ionizing radiation. An integrated circuit is designed and fabricated with contemporary processing technologies in well-known fashion, except that certain devices, called &ldquo;safeguard&rdquo; devices, are added to the integrated circuit. The safeguard devices are fabricated so that they, and not the other devices on the integrated circuit, are susceptible to ionizing radiation. Furthermore, the safeguard devices are coupled to the utile devices on the integrated circuit in such a manner than when the integrated circuit is bombarded with ionizing radiation the safeguard devices short and destroy the functionality of the utile devices, and, therefore, the functionality of the integrated circuit.

Increasing the susceptability of an integrated circuit to ionizing radiation

A method for forming a resistor includes causing a semiconductor layer to have a first resistance, forming a first mask on the semiconductor layer, causing portions of the semiconductor layer left exposed by the first mask to have a second resistance that is lower than the first resistance, forming a second mask on the first mask and on the semiconductor layer, removing portions of the first mask and the semiconductor layer left exposed by the second mask, removing the second mask, and causing portions of the semiconductor layer exposed by the removing of the second mask to have a third resistance that is lower than the second resistance. Because a resistor formed by such a process can include an aligned body and contact, it often occupies a smaller area than prior integrated resistors having a similar resistance value.

Method for forming an interated resister having aligned body and contact

A radiation-susceptible integrated circuit comprises radiation sensor, a differential amplifier and circuit disabler. The radiation sensor includes two devices that have a different tolerance to ionizing radiation. When exposed to a total dose of ionizing radiation that exceeds the radiation tolerance of one of the devices but not the other, only the more radiation-susceptible device will exhibit an increase in leakage current. The differential amplifier is operable to generate an output signal having a value that is indicative of a difference or offset that exists between the output of the two devices. The output signal from the differential amplifier is received by the circuit disabler, which is activated, or not, as a function of the value of the output signal.

Semiconductor circuit having increased susceptibility to ionizing radiation

A process for selectively removing a silicon-containing material through use of a byproduct of a chemical vapor deposition is disclosed. The process includes fabricating an insulating film upon a silicon base layer such that the insulating film includes a cavity. A diffusion barrier layer is deposited into the cavity. The diffusion barrier layer is formed during a chemical vapor deposition which produces an alkyl halide as a byproduct. A photoresist layer is fabricated upon a silicon-containing material. A portion of the photoresist is removed, thereby exposing a portion of the silicon-containing material. The exposed portion of the silicon-containing material is removed with a chemical etch solution including the alkyl halide.

Process for removing a silicon-containing material through use of a byproduct generated during formation of a diffusion barrier layer

An integrated resistor includes a resistor body region and a resistor contact region that is aligned with the body region. Because the resistor includes an aligned body and contact, it often occupies a smaller area than prior integrated resistors having a similar resistance value. A method for forming such a resistor is also disclosed.

Integrated resistor having aligned body and contact and method for forming the same

A method for manufacturing an integrated circuit having high voltage transistors and low voltage transistors is disclosed. First, lightly doped drains are formed in both high voltage transistors and low voltage transistors within the integrated circuit. A thin layer of silicon nitrate film is then deposited on the first and second transistors. Afterwards, a layer of silicon oxide is deposited on the silicon nitride film. After forming oxide spacers on both high voltage transistors and low voltage transistors, the oxide spacers are removed from the low voltage transistors. Finally, diffusion implants are performed on the first and second transistors. As a result, the high voltage transistors possess lightly doped drained junctions.

Integrated circuit capable of operating at two different power supply voltages

Semiconductor devices and integrated circuits that benefit from the advantages of contemporary processing technologies yet are irreparably damaged by ionizing radiation, and methods for making the same. Transistors that are particularly intolerant to ionizing radiation have a gate insulator that includes a portion of a screen layer that is used in conjunction with N- and P-well implantation. After the implantation step, the screen layer exhibits significantly degraded tolerance to ionizing radiation, so that a gate insulator incorporating a portion of such a screen layer will likewise be radiation intolerant. By selectively removing portions of the screen layer, a method is provided for co-locating radiation-tolerant and radiation-intolerant transistors on a substrate. A radiation intolerant integrated circuit is formed by adding &ldquo;safeguard devices&rdquo; to an integrated circuit. The safeguard devices are susceptible to relatively low doses of ionizing radiation while other &ldquo;utile devices&rdquo; on the integrated circuit are not. The safeguard devices are coupled to the utile devices in such a manner that when the integrated circuit is bombarded with ionizing radiation, the safeguard devices short and destroy the functionality of the utile devices, and, hence, the functionality of the integrated circuit.

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Vienna, VA, United States of America

Murty S Polavarapu