Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Dow Global Technolgoies LLC

Jiangsu Hengtron Nanotech Co., Ltd.

Murali G Theivanayagam

Hongyu Wang

Ing-Feng Hu

Matthew Richard Van Hanehem

Hideaki Maeda

Jui-Ching Lin

Yi Guo

Liang Chen

Bin Li

Steven Kaye

Deidre A Strand

Xindi Yu

Thierry Drezen

Stacie L Santhany

Shrikant N Khot

Jamie L Cohen

Michael A Lowe

Christopher P Rentsch

Jianxin Ma

Yu-Hua Kao

Steven S Kaye

Michael Lowe

Diedre A Strand

A process for chemical mechanical polishing a substrate containing cobalt, zirconium oxide, poly-silicon and silicon dioxide, wherein the cobalt, zirconium, and poly-silicon removal rates are selective over silicon dioxide. The chemical mechanical polishing composition includes water, a benzyltrialkyl quaternary ammonium compound, cobalt chelating agent, corrosion inhibitor, colloidal silica abrasive, optionally a biocide and optionally a pH adjusting agent, and a pH greater than 7, and the chemical mechanical polishing compositions are free of oxidizing agents.

Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films

A method for forming lithium metal oxides comprised of Ni, Mn and Co useful for making lithium ion batteries comprises providing precursor particulates of Ni and Co that are of a particular size that allows the formation of improved lithium metal oxides. The method allows the formation of lithium metal oxides having improved safety while retaining good capacity and rate capability. In particular, the method allows for the formation of lithium metal oxide where the primary particle surface Mn/Ni ratio is greater than the bulk Mn/Ni. Likewise the method allows the formation of lithium metal oxides with secondary particles having much higher densities allowing for higher cathode densities and battery capacities while retaining good capacity and rate performance.

Lithium metal oxide cathode materials and method to make them

A process for chemical mechanical polishing cobalt to planarize the surface and remove at least some of the cobalt from a substrate. The process includes providing a polishing composition, containing, as initial components: water; an oxidizing agent; colloidal silica abrasive particles; aspartic acid or salts thereof; a phosphonic acid having an alkyl group of greater than ten carbon atoms, wherein the phosphonic acid having the alky group of greater than ten carbon atoms is included in amounts sufficient to enable high cobalt removal rates of &#x2265;2000 &#x212b;/min and substantial cobalt corrosion inhibition; and providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away and cobalt corrosion is substantially inhibited.

Chemical mechanical polishing method for cobalt with high cobalt removal rates and reduced cobalt corrosion

A process for chemical mechanical polishing a substrate containing cobalt and TiN to planarize the surface and at least improve surface topography of the substrate. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; aspartic acid or salts thereof; and, colloidal silica abrasives with diameters of &#x2264;25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away to planarize the substrate to provide improved cobalt:TiN removal rate selectivity.

Chemical mechanical polishing method for cobalt

The invention is an aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co. The slurry includes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (&#x3b1;), 0.5 to 3 wt % colloidal silica particles (&#x3b2;), a cobalt corrosion inhibitor, 0.5 to 2 wt % complexing agent (&#x3b3;) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N'-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N&#x2032;,N&#x2032;-tetraacetic acid, and balance water having a pH of 5 to 9. The total concentrations remain within the following formulae as follows: wt % (&#x3b1;)+wt % (&#x3b2;)=1 to 4 wt % for polishing the cobalt or cobalt alloy; wt % (&#x3b3;)&#x2264;2*wt % (&#x3b1;) for limiting static etch of the cobalt or cobalt alloy; and wt % (&#x3b2;)+wt % (&#x3b3;)&#x2264;3*wt % (&#x3b1;) for limiting static etch.

Polishing slurry for cobalt-containing substrate

A process for chemical mechanical polishing a substrate containing cobalt and TiN to at least improve cobalt: TiN removal rate selectivity. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alanine or salts thereof; and, colloidal silica abrasives with diameters of &#x2264;25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away such that there is an improvement in the cobalt: TiN removal rate selectivity.

The invention is a method for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co. The method mixes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (&#x3b1;) into a slurry containing 0.5 to 3 wt % colloidal silica particles (&#x3b2;), the colloidal silica particles containing primary particles, 0.5 to 2 wt % complexing agent (&#x3b3;) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N'-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N&#x2032;,N&#x2032;-tetraacetic acid, and balance water having a pH of 5 to 9 to create a polishing slurry for the semiconductor substrate. Oxidizing at least a surface portion of the Coto Coof the semiconductor substrate to prevent runaway dissolution of the Coreduces polishing defects in the semiconductor substrate. Polishing the semiconductor substrate with a polishing pad removes the surface portion of the semiconductor substrate oxidized to Co.

Method for polishing cobalt-containing substrate

Particulate LMFP cathode materials having high manganese contents and small amounts of dopant metals are disclosed. These cathode materials are made by milling a mixture of precursor materials in a wet or dry milling process. Preferably, off-stoichiometric amounts of starting materials are used to make the cathode materials. Unlike other high manganese LMFP materials, these cathode materials provide high specific capacities, very good cycle life and high energies even at high discharge rates.

LMFP cathode materials with improved electrochemical performance

An improved method of making a cathode for use in a lithium ion battery is comprised of mixing a lithium metal oxide and lithium metal phosphate in a solvent, where both of these are comprised of primary particles that have been agglomerated into secondary particles of particular size and mixing is insufficient to break up the particles of the lithium metal phosphate, coating the mixture of step (A) on to a metal foil and removing the solvent to form the cathode. The lithium metal oxide is also desirably not broken either. The cathode may be one that has lithium metal oxide and a particular lithium metal phosphate wherein the majority of the metal is Mn.

Growing community of inventors

New Castle, DE, United States of America

Murali G Theivanayagam