Seoul National University

Munhyeon Kim

Jae-Joon Kim

A random access memory includes a first transistor including a first gate extending in a first direction, a second transistor disposed on a same plane as the first transistor and including a second gate extending in the first direction, a third transistor including a third gate extending in a second direction perpendicular to the first direction and formed on the first transistor, a fourth transistor including a fourth gate extending in the second direction and formed on the second transistor, a first storage node connecting the first gate of the first transistor to a drain of the third transistor and storing data, and a second storage node connecting the second gate of the second transistor to a drain of the fourth transistor and storing data.

Growing community of inventors

Seoul, South Korea

Munhyeon Kim