Rohm Co., Ltd.

Muneyuki Matsumoto

Koji Yamamoto

Nobuhisa Kumamoto

Tatsuya Sakamoto

A chemical mechanical polishing cloth for chemically mechanically polishing a workpiece. This chemical mechanical polishing cloth includes, on the opposite-to-workpiece face thereof: polishing projections having polishing faces arranged to come in contact with a workpiece for polishing the same; polishing agent passages for introducing a polishing agent; and at least one-stage step portions formed between the polishing faces of the polishing projections and the bottoms of the polishing agent passages.

Polishing cloth for chemical mechanical polishing, and chemical mechanical polishing apparatus using said cloth

A semiconductor device includes an insulating film. On this insulating film are formed an interconnection trench communicating with a semiconductor element and a pad trench communicating with the interconnection trench. In the pad trench, a protrusion is formed by leaving one part of the insulating film. A conductive film is formed over the insulating film including the interconnection and pad trenches. Thereafter, the conductive film is removed by a CMP process. At this time, the protrusion serves to prevent the conductive film in the pad trench from being over-polished.

Damascene interconnection and semiconductor device

A semiconductor device includes an insulating film. On this insulating film, are formed an interconnection trench communicating with a semiconductor element and a pad trench communicating with the interconnection trench. In the pad trench, a protrusion is formed by leaving one part of the insulating film. A conductive film is formed over the insulating film including the interconnection and pad trenches. Thereafter, the conductive film is removed by a CMP process. At this time, the protrusion serves to prevent the conductive film in the pad trench from being over-polished.

A polishing machine provided with a plurality of bases operative independently of each other; a plurality of abrasive pads respectively fixed to the plurality of bases and each having an abrasive surface for polishing a workpiece; and a base driving mechanism for individually operating the plurality of bases. The operations of the respective bases are individually controlled by controlling the base driving mechanism by means of a control circuit. The control circuit controls the base driving mechanism so that the workpiece is generally uniformly polished by the abrasive surfaces of the respective abrasive pads.

Polishing machine having a plurality of abrasive pads

A method of producing a semiconductor device having a connecting thin film for connection to a bonding wire on a bonding pad formed on a surface of a surface protective film. A recess is formed in the surface of the surface protective film. Thereafter, a metal deposited layer composed of a material for the bonding pad is formed, and a metal thin film composed of a material for the connecting thin film is further formed thereon. After the metal thin film is formed, unnecessary parts of the metal deposited layer and the metal thin film are removed by chemical mechanical polishing, for example.

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Kyoto, Japan

Muneyuki Matsumoto