Tokyo Electron Limited

Muneyuki Imai

Akitaka Shimizu

Noriyuki Kobayashi

Satoshi Toda

In a substrate processing method for etching a silicon oxide layer formed on a surface of a substrate, a surface of the silicon oxide layer is hydrophilized. Then, the silicon oxide layer is etched by supplying a halogen-containing gas to the substrate and sublimating a reaction product generated by reaction between the halogen-containing gas and the silicon oxide layer.

Substrate processing method

There is disclosed a substrate processing method for etching a substrate on which a first and a second silicon oxide layer having different film qualities are formed side by side. The substrate processing method includes: a first etching step of supplying a halogen-containing gas that is not activated to the substrate and sublimating reaction by-products generated by reaction between the halogen-containing gas and the first and the second silicon oxide layer; and a second etching step of etching the substrate by radicals generated by activating the halogen-containing gas.

There is provided a substrate processing method performed on a substrate having a recess formed in a surface thereof, a first silicon-containing film formed on a bottom surface of the recess, a second silicon-containing film formed on both sides of the recess, the method including: depositing a carbon-based deposit on the surface of the substrate; removing the first silicon-containing film by performing a COR (Chemical Oxide Removal) process in which a silicon-containing film is modified to a reaction product using a processing gas, on the substrate; and removing the deposited carbon-based deposit.

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Yamanashi, Japan

Muneyuki Imai