Nitto Optical Co., Ltd.

Solartes Lab, Ltd.

Muneyuki Hirai

Kazutaka Terashima

Suzuka Nishimura

A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blend-type BP layer formed on an Si substrate, an AlInGaN (y&#x2267;0, x&#x3e;0) crystal as a mother crystal maintaining the zinc blend-type crystal structure and In dots having an In concentration higher than that of the AlInGaN (y&#x2267;0, x&#x3e;0) crystal as the mother crystal.

Active region containing nanodots (also referred to as 'quantum dots') in mother crystal formed of zinc blende-type (also referred to as 'cubic crystal-type') AlyInxGal-y-xN Crystal (y[[&#x25a1;]][&#x2267;] 0, x &#x3e; 0) grown on Si substrate, and light emitting device using the same (LED and LD)

A method for producing a GaN-based crystal includes forming a Zinc-blend type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blend type structure; and forming a Zinc-blend type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less.

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Kanagawa, Japan

Muneyuki Hirai