Hitachi-high-technologies Corporation

Hitachi, Ltd.

Hitachi High-tech Corporation

Muneyuki Fukuda

Hiroyasu Shichi

Satoshi Tomimatsu

Naomasa Suzuki

Kaoru Umemura

Hidemi Koike

Noritsugu Takahashi

Hideo Kashima

Mitsuo Tokuda

Tomoyasu Shojo

Natsuki Tsuno

Yasunari Sohda

Mitsugu Sato

Yasuhiro Mitsui

Yohei Nakamura

Heita Kimizuka

Atsuko Fukada

Hiromasa Yamanashi

Tohru Ishitani

Takafumi Miwa

Takeyoshi Ohashi

Sayaka Tanimoto

Eiichi Seya

Yoshinori Momonoi

Ichiro Tachibana

Hidetoshi Nishiyama

Hiroyuki Ito

Yoshinori Nakayama

Fumihiro Sasajima

Yasuhiro Shirasaki

Hiroaki Mito

Minami Shouji

Akihiro Miura

Tasuku Yano

Hajime Kawano

Kenji Obara

Shinji Okazaki

Momoyo Enyama

Masaki Hasegawa

Satoshi Takada

Osamu Nasu

Shoji Hotta

Nobuhiro Okai

Miyuki Takahashi

Hiroshi Suzuki

Junichi Tanaka

Hideo Todokoro

Mari Nozoe

Hideyuki Kazumi

Yoichi Ose

Hiroki Kawada

Hiroshi Makino

Koichi Hamada

Makoto Ezumi

Akira Ikegami

Osamu Komuro

Makoto Sakakibara

Masakazu Sugaya

Masanari Koguchi

Kei Sakai

Masashi Sakamoto

Daisuke Bizen

Ruriko Tsuneta

Yohei Minekawa

Hideto Dohi

Katsunori Onuki

Kazunari Asao

Isamu Sekihara

Hirohiko Kitsuki

Keiichiro Hitomi

Manabu Yano

Tatsuaki Ishijima

Isao Ochiai

Kenichi Morita

Kaori Shirahata

Yasunari Souda

Katsura Takaguchi

Takanori Kishimoto

Shou Takami

Osamu Watanabe

Kohei Chiba

Takuji Miyamoto

Atsushi Okita

An object of the present disclosure is to provide a system for deriving a type of defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step), and derives (Step) a type of a defect by referring to (Step) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

System for deriving electrical characteristics and non-transitory computer-readable medium

The present disclosure hereinafter proposes a charged particle beam device and a method for adjusting a charged particle beam device which aim to appropriately set device conditions independently of a state of a sample. The present disclosure proposes a method and a system for adjusting contrast and brightness of an image, comprising: adjusting offset (step) of a signal processing device of the charged particle beam device so that the brightness of a pattern in an image obtained by scanning with a first charged particle beam (first intermittent condition beam) becomes a predetermined value; and adjusting a gain (step) of the signal processing device so that the brightness of a pattern in an image obtained by scanning with a second charged particle beam, which is a pulse beam (second intermittent condition beam) different from the first charged particle beam in at least one of irradiation time, irradiation distance, interval time between irradiation points, and distance between irradiation points, becomes a predetermined value.

Adjusting method of charged particle beam device and charged particle beam device system

Provided is an image processing system capable of estimating a three-dimensional shape of a semiconductor pattern or a particle by solving problems of measurement reduction in a height direction and taking an enormous amount of time at a time of acquiring learning data. The image processing system according to the disclosure stores a detectable range of a detector provided in a charged particle beam device in a storage device in advance, generates a simulated image of a three-dimensional shape pattern using the detectable range, and learns a relationship between the simulated image and the three-dimensional shape pattern in advance.

Image processing system

A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

Charged particle beam apparatus

An object of the present disclosure is to provide a system for deriving a type of a defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step), and derives (Step) a type of a defect by referring to (Step) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

Device defect detection method using a charged particle beam

Provided is a technique capable of achieving both throughput and robustness for a function of adjusting brightness (B) and contrast (C) of a captured image in a charged particle beam device. The charged particle beam device includes a computer system having a function (ABCC function) of adjusting the B and the C of an image obtained by imaging a sample. The computer system determines whether adjustment is necessary based on a result obtained by evaluating a first image obtained by imaging an imaging target of the sample (step S), executes, when the adjustment is necessary based on a result of the determination, the adjustment on a second image of the imaging target to set an adjusted B value and an adjusted C value (step S), and captures a third image of the imaging target based on the adjusted setting values to generate an image for observation (step S).

Charged particle beam device

A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.

A charged particle beam device according to the present invention changes a signal amount of emitted charged particles by irradiating the sample with light due to irradiation under a plurality of light irradiation conditions, and determines at least any one of a material of the sample or a shape of the sample according to the changed signal amount.

The purpose of the present disclosure is to propose a charged particle beam device capable of allowing specifying of a distance between irradiation points for a pulsed beam and a time between irradiation points. Proposed is a charged particle beam device equipped with a beam column which has a scanning deflector for sweeping a beam and directs the beam swept by the scanning deflector onto a sample in pulses, wherein: the distance between irradiation points of the pulsed beam is set such that feature quantities of one or more specific regions of an image obtained on the basis of an output of a detector satisfy a predetermined state; the duration of time between irradiation points for the pulsed beam is changed when in a state in which the set distance between irradiation points is set or in a state in which multiple distances between irradiation points determined on the basis of the specified distance between irradiation points are set; and the beam emission is carried out according to the duration of time between irradiation points whereby the feature quantities of the multiple specific regions of the image obtained on the basis of the output of the detector satisfy the predetermined state.

Method for determining irradiation conditions for charged particle beam device and charged particle beam device

To improve detection efficiency of secondary particles without increasing a size of a charged particle beam apparatus, a charged particle beam apparatus according to the invention includes: a charged particle beam source configured to irradiate a sample with a primary particle beam; a scanning deflector configured to scan and deflect the primary particle beam to a desired position of the sample; and a detector configured to detect secondary particles emitted from the desired position. The charged particle beam apparatus further includes: a focusing lens electrode arranged coaxially with the primary particle beam and configured to generate a focusing electric field that is an electric field that focuses a trajectory of the secondary particles; and a mesh electrode configured to reduce leakage of the focusing electric field on a trajectory of the primary particle beam.

Growing community of inventors

Kokubunji, Japan

Muneyuki Fukuda