Mitsubishi Electric Corporation

Muneyoshi Suita

Eiji Yagyu

Takuma Nanjo

Akifumi Imai

Hiroyuki Okazaki

Kenichiro Kurahashi

Keisuke Nakamura

Yuji Abe

Toshiyuki Oishi

Yasunori Tokuda

Yosuke Suzuki

Kunihiko Nishimura

Tomohiro Shinagawa

Koji Yoshitsugu

Takashi Matsuda

The semiconductor manufacturing device includes: a lower substrate support base configured to support a diamond substrate; an upper substrate support base configured to support a semiconductor substrate; a support base drive unit configured to move the lower substrate support base and the upper substrate support base to bring the diamond substrate and the semiconductor substrate into close contact with each other under a state in which a pressure is applied to the diamond substrate and the semiconductor substrate in a thickness direction; and a second mechanism configured to deform a surface of the upper substrate support base opposed to the lower substrate support base so that a surface of the semiconductor substrate opposed to the diamond substrate forms a parallel surface or a parallel plane with respect to a surface of the diamond substrate opposed to the semiconductor substrate.

Semiconductor manufacturing method and semiconductor manufacturing device

A semiconductor device includes: a substrate; a nitride semiconductor layer on the substrate; a source electrode, a drain electrode and a gate electrode on the nitride semiconductor layer; and a SiN surface protective film covering the nitride semiconductor layer, wherein a composition ratio Si/N of Si and N that form a Si&#x2014;N bond of the SiN surface protective film is 0.751 to 0.801.

Semiconductor device and method of manufacturing the same

The present invention relates to a method for manufacturing a heterojunction semiconductor device including an AlGaN layer, the method including the steps of (a) forming a dummy electrode in a region where a gate electrode is arranged on the AlGaN layer, (b) depositing a dielectric film on the AlGaN layer by exposing side surfaces of the dummy electrode, using a device having anisotropy, (c) forming an opening in the dielectric film by removing the dummy electrode, and (d) forming the gate electrode that extends from inside the opening onto the dielectric film in a vicinity of the opening.

Method for manufacturing semiconductor device

The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlGaN channel layer with a composition ratio of Al being x (0&#x3c;x&#x3c;1) formed on a substrate, an AlGaN barrier layer with a composition of Al being y (0&#x3c;y&#x2266;1) formed on the channel layer, and source/drain electrodes and a gate electrode formed on the barrier layer, wherein the composition ratio y is larger than the composition ratio x.

Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region

Growing community of inventors

Tokyo, Japan

Muneyoshi Suita