Nippon Soken, Inc.

Denso Corporation

Nippondenso Co., Ltd.

Other

Muneo Yorinaga

Kazushi Asami

Takahiko Yoshida

Yoshimi Yoshino

Takeshi Ito

Hiroaki Yamaguchi

Tsuyoshi Fukada

Kazuhiko Miura

Hirofumi Higuchi

Tomoatsu Makino

Daisuke Makino

Kaoru Kuzuoka

Atsushi Hashikawa

Itsuhei Ogata

Tomoyuki Kanda

Masahiro Shiozawa

Yasuyoshi Hirai

Yasushi Matsuhiro

Kazuhito Nomura

Takayuki Ishikawa

Takeshi Itou

Sumiharu Yokoiwa

Thermistor elements composed mainly of a metal oxide sintered body are prepared by mixing a metal oxide precursor in a liquid phase to prepare a solution or slurry of the precursor. The precursor solution or slurry is sprayed to form droplet particles which are heat treated to form a thermistor raw material powder which powder is then molded and sintered into a shape to provide a metal oxide sintered body.

Method of producing thermistor element and production apparatus for production apparatus for producing raw materials for thermistor element

A semiconductor angular velocity sensor has a frame-shaped base portion, a detection oscillator connected to the base portion through a detection beam portion, and a drive oscillator connected to the detection oscillator through a drive beam portion. Each of the beam portions has a pair of beams each generally having a U shape and connected to each other through a bridge portion. Accordingly, the beam portions can have large rotational rigidity not to prevent oscillations of the oscillators.

Semiconductor physical quantity sensor

A pressed-contact type semiconductor device in which a main electrode surface of a semiconductor element is contacted with an electrode plate by a pressed-contact, which can reduce both an electric resistance and a thermal resistance between the main electrode surface of the semiconductor element and the electrode plate. The pressed-contact type semiconductor device ( ) is provided with a semiconductor element ( ) having electrode surfaces, a pair of electrode plates ( ) contacted with the electrode surfaces by the pressed-contact, a pair of insulating plates ( ) contacted with the outer side of the pair of the electrode plates by the pressed-contact, and a pair of radiating plates ( ) contacted with the outer side of the pair of the insulating plates by the pressed-contact. A contact intermediary member ( ), which is made up of particle member having at least thermal conductivity and electric conductivity, is intercalated between the semiconductor element and the electrode plate. The particle member of the contact intermediary member includes large particles having an average particle diameter of more than 2 &mgr;m, and small particles having an average particle diameter of to or less than 2 &mgr;m. Contact intermediary members ( ) are intercalated into gaps generated between the electrode plate and the insulating plate, and between the insulating plate and the radiating plate so as to fill up these gaps. The contact intemediary members are made of powder material having at least thermal conductivity.

Electric apparatus having a contact intermediary member and method for manufacturing the same

An angular velocity sensor includes a tuning-fork oscillator having a pair of arms jointed by a trunk, the pair of arms extending in parallel to each other, first and second driving piezoelectric elements arranged only on one surface of the trunk with a gap therebetween in an extending direction of the arms, and angular velocity detecting piezoelectric elements arranged on surfaces of the arms in parallel with the one surface of the trunk on which the first and second piezoelectric elements are arranged.

Angular velocity sensor

An angular velocity sensor comprises a driving element, a detecting element, and a feedback element, all of which are disposed on an element forming face of an oscillator. An electrostatic capacitance of the feedback element is set to be equal to that of the detecting element. As a result, a synchronous detection circuit can reduce the offset signal due to a phase difference between signals from the feedback element and the detecting element.

A plasma etching method, which can form concave parts and/or opening parts on a substrate by performing etching at a high speed and does not damage an element part formed on the surface of the substrate, is disclosed. On a semiconductor substrate with one surface as an element part forming surface and the other surface having an insulating film thereon as an etching surface are formed concave parts and/or opening parts by means of etching by applying a high-frequency electric power to a reactive gas and generating plasma thereby. The substrate is disposed on an electrode having grounded electric potential with the insulating film positioned on the lower side and a conductive part material having grounded electric potential is disposed around the substrate. When one end of the conductive part material is contacted with the side of the etching surface of the substrate, electric charge generated on the surface of the substrate moves to the conductive part material, and the electric potential of the substrate is lowered.

Plasma etching method and device manufacturing method thereby

A plasma etching process for forming a recess or opening on a silicon substrate by generating plasma between a pair of electrodes in an anode-coupled planar-type plasma etching apparatus and etching the silicon substrate located on one of the electrodes with the plasma, an improvement residing in that an etchant is a mixed gas of sulfur hexafluoride and oxygen and an etching mask covering the substrate, except for a portion where the recess or opening is to be formed, is made of chromium or a chromium compound. Preferably the distance between the electrodes is 10 to 30 mm, the volume ratio of sulfur hexafluoride to oxygen is 90:10 to 60:40, the pressure of the etchant gas is 0.15 to 0.4 Torr (20 to 53 Pa), and the temperature of the substrate is not less than 40.degree. C.

Process of plasma etching silicon

An angular velocity sensor which suppresses the generation of noise in a detector piezo-electric element due to vibration of a vibrator caused by expansion and contraction of a driver piezo-electric element. A driver piezo-electric element 6 is adhered to an upper part on the left-side surface of a first square pole 3 of a vibrator 1 and a driver piezo-electric element 7 is adhered to an upper part on the right-side surface of a second square pole 4. Further, a detector piezo-electric element 8 is adhered to a lower part on the front surface of the first square pole 3 of the vibrator 1 and a detector piezo-electric element 9 is adhered to a lower part on the front surface of the second square pole 4. Here, the driver piezo-electric elements 6, 7 and the detector piezo-electric elements 8, 9 are disposed so as to be deviated so that they will not overlap in the axial direction of the square poles.

Angular velocity sensor and method of adjusting the same

A vibration and acoustic wave detecting device employing a piezoelectric element has a construction such that a piezoelectric element comprises a first surface electrode disposed on a first surface of the piezoelectric element and having a first output terminal of the detecting device, a second surface electrode opposite to the first surface thereof, a side electrode disposed to surround a side surface of the detecting device and having portions respectively extending over the first and second surfaces, the three electrodes being disposed separately from each other, and a resistor disposed on the piezoelectric element to extend across the first surface electrode and the side electrode and to be connected therewith electrically, and the piezoelectric element further comprises a conductive member which is attached to the piezoelectric element to be in contact with the second surface electrode and the side electrode and hence to provide electrical connection between both electrodes. The conductive member supports the piezoelectric element and also provides its second output terminal. Thus, the piezoelectric element and the resistor are electrically connected in parallel between the first and second output terminals of the detecting device. This construction makes it possible to simply and easily manufacture a detecting device incorporating a resistor for increasing the available frequency bandwidth without causing any problem in the manufacturing process.

Growing community of inventors

Anjo, Japan

Muneo Yorinaga