Mitsubishi Denki Kabushiki Kaisha

Muneo Hatta

Susumu Takeuchi

Hiroshi Tobimatsu

A WSI device comprises a semiconductor substrate having a wafer scale size. An integrated circuit having a unified function is formed on a main surface of the semiconductor substrate. The semiconductor substrate defines various cutouts centrally and/or peripherally thereof. The cutouts serve to extend peripheral regions of the semiconductor substrate. Bonding pads are formed along the extended peripheral regions of the semiconductor substrate. As a result, the number of bonding pads that can be formed is increased to promote multi-functioning of the WSI device.

Wafer scale integration device

A semiconductor device having a semiconductor chip packaged in a semiconductor container, which operates in receiving visible light, near infrared light and ultraviolet light, the semiconductor device includes a lower plate formed of a material which hardly transmits light with high insulation resistance and high mechanical intensity and has coefficient of linear expansion almost the same as that of the semiconductor chip, the semiconductor chip mounted on the lower plate, a middle plate comprising a single-layer or a multiple-layer wiring board, and an upper plate formed of a material which hardly transmits light with high insulation resistance and high mechanical intensity and has coefficient of linear expansion almost the same as that of the lower plate and having a window for incident light at one part thereof, in which the lower plate and the upper plate are bonded with putting the middle plate therebetween and an upper part of the upper plate is sealed by a lid formed of glass or a synthetic resin.

Growing community of inventors

Hyogo, Japan

Muneo Hatta