Shibaura Mechatronics Corporation

Kabushiki Kaisha Toshiba

Kabushiki Kaisha Tokuda Seisakusho

Munenori Iwami

Hisashi Nishigaki

Yoji Takizawa

Tomokazu Ito

Tsukasa Kawakami

Haruka Narita

Takumi Hanada

Masaaki Furuya

Noboru Suzuki

Katsuya Yamada

Takahiko Wakatsuki

Hidetaka Jyo

Ganachev IvanPetrov

Masanori Kondo

Reiichiro Sensui

Masahiro Shibagaki

Shigeki Hazano

According to one embodiment, an etching amount measurement pattern is provided in a surface of a substrate. The pattern comprises a plurality of components two-dimensionally disposed and causing light incident on the pattern to be diffracted, A configuration of the component has 4-fold rotational symmetry. The plurality of components is arranged in a disposition having 4-fold rotational symmetry.

Etching amount measurement apparatus for dry etching apparatus

A heater unit according to an embodiment includes: a flat heater including a linear heating element arranged in a planar pattern; a first mesh body formed in a mesh pattern using a material with high heat conductivity and placed at least on one side of the flat heater facing the flat heater; and a second mesh body formed in a mesh pattern using a material with lower heat conductivity than that of the first mesh body and placed to face a surface of the first mesh body opposite to the surface of the first mesh body facing the flat heater.

Heater unit, fan filter unit, and substrate processing apparatus

A resin layer formation method and device for making a resin layer uniform on a substrate before lamination or on a substrate is provided. Adhesive is coated at an inner circumference side while rotating a substrate at low speed. A first adhesive layer is formed on the surface of the substrate by rotating at high speed. A step difference section is formed around a rotation center of the substrate by irradiating ultraviolet on an area in the inner circumference side of the first adhesive layer to hardening the area. Adhesive is coated at the rotation center side from the step difference section on the substrate, and a second adhesive layer is formed on the first adhesive layer by rotating the substrate at high speed. The first adhesive layer and the second adhesive layer are integrated to form a uniform adhesive layer.

Resin layer formation method, resin layer formation device, disk and disk manufacturing method

A resin layer formation method, resin layer formation device, disk and disk manufacturing method for making a resin layer uniform on a substrate before lamination or on a substrate to be coated by a simple procedure are provided. Adhesive A is coated at the inner circumference side while rotating a substrate P at low speed, a first adhesive layer ALis formed on the surface of the substrate P by rotating the substrate P at high speed, a step difference section H is formed around a rotation center of the substrate P by irradiating ultraviolet on an area in the inner circumference side of the first adhesive layer ALand hardening the area, the adhesive A is coated at the rotation center side from the step difference section H on the substrate P, and a second adhesive layer ALis formed on the first adhesive layer ALby rotating the substrate P at high speed. The first adhesive layer ALand the second adhesive layer ALare integrated to form a uniform adhesive layer B as a whole.

Resin layer formation method, resin layer formation device, disk, and disk manufacturing method

Resin layer formation method, resin layer formation device, and disk manufacturing method

An apparatus for producing semiconductor devices in which a plurality of treatment chambers such as a load chamber, an etching chamber, a sputtering chamber, an ion implantation chamber, a CVD chamber, an unload chamber, a transfer chamber, a heat-treatment chamber, a rinsing chamber and the like, are connected in series preferably in the form of U for effecting various treatments of semiconductor wafers. Wafer conveyor and transfer means are provided to move a wafer through the treatment chambers in which the wafer is normally sequentially processed and these conveyor and transfer means are reversible so that a wafer which has been moved into a predetermined treatment chamber can be returned to the inlet of the apparatus, whereby the quantity of dust attached to the wafer in each treatment chamber can be easily and positively detected. In the heat-treatment chamber, the hot air is discharged against the upper surface of the wafer on the belt conveyor while a vertically movable heating plate is brought into contact with the undersurface of the wafer so that the uniform heat-treatment can be accomplished within a short period of time. Furthermore, the inner surfaces of the etching chamber or the like are lined with detachable linings made of, for instance, aluminum so that maintenance is facilitated.

Apparatus for producing semiconductor devices

Growing community of inventors

Yokohama, Japan

Munenori Iwami