Hitachi, Ltd.

Hitachi Automotive Systems, Ltd.

Munenori Degawa

Heewon Jeong

Masahide Hayashi

Takeshi Konno

Tsukasa Fujimori

Kentarou Miyajima

Toshihiko Fukamachi

Hiroshi Kikuchi

There is provided a fluid detection device that detects a flow velocity or a flow rate of a fluid flowing through a piping, the fluid detection device including: a sound detection unit that detects a sound from the piping, and outputs a frequency signal; a signal processing unit that calculates a strength ratio of the frequency signal on the basis of the frequency signal and a predetermined reference frequency signal; and a data conversion unit that obtains the flow velocity or the flow rate on the basis of the strength ratio of the frequency signal and a predetermined fluid characteristic function.

Detection device and detection method, and fluid control system

To provide a high-performance semiconductor sensor device and a method for manufacturing the semiconductor sensor device. This semiconductor sensor device has a sensor chip, and a first thin film formed on the sensor chip, said sensor chip being mechanically connected, via the first thin film, to a second thin film formed on a base formed of a polycrystalline material.

Semiconductor sensor device and method for manufacturing same

In order to provide a technology capable of suppressing degradation of measurement accuracy due to fluctuation of detection sensitivity of an MEMS by suppressing fluctuation in natural frequency of the MEMS caused by a stress, first, fixed portionstoare displaced outward in a y-direction of a semiconductor substrateby deformation of the semiconductor substrate. Since a movable bodyis disposed in a state of floating above the semiconductor substrate, it is not affected and displaced by the deformation of the semiconductor substrate. Therefore, a tensile stress (+&#x3c3;) occurs in the beamand a compressive stress (&#x2212;&#x3c3;) occurs in the beam. At this time, in terms of a spring system made by combining the beamand the beam, increase in spring constant due to the tensile stress acting on the beamand decrease in spring constant due to the compressive stress acting on the beamare offset against each other.

Micro electro mechanical system

This invention is directed to provision of high-performance inertial sensor that can sustain SNR even in an environment where vibration disturbance exists. A vibration type inertial sensor comprises: two deadweights (); means (C, C, C, C, +vd, &#x2212;vd) for displacing the two dead weights in the anti-phase; two sets of electrodes (C, C, C, C) for detecting, as capacitance changes, the displacements of the two dead weights; and a C/V converting unit () for converting the capacitance changes of the electrodes to electric signals. In the vibration type inertial sensor, a set of electrodes (e.g., Cand C), which exhibit an increased electrostatic capacitance therebetween in the case where the two dead weights () are displaced in the anti-phase, are electrically connected to each other, and a set of electrodes (e.g., Cand C), which exhibit a reduced electrostatic capacitance therebetween in the foregoing case, are electrically connected to each other, and further these sets of electrodes are connected to the C/V converting unit ().

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Kokubunji, Japan

Munenori Degawa