Murata Manufacturing Co., Ltd.

Munehisa Watanabe

Hideki Iwamoto

Hajime Kando

Syunsuke Kido

Kengo Onaka

Takashi Ishihara

Yasumasa Taniguchi

Tsuyoshi Mukai

Takuro Okada

Katsuya Daimon

Tatsuya Tsujiguchi

Yukihiro Kitaichi

Yuichi Kushihi

Seiji Kai

Shigeji Arakawa

Hisashi Yamazaki

Koji Yamamoto

Keiji Okada

Takuya Murayama

Shin Saijo

Harunobu Horikawa

A piezoelectric device includes a support substrate, an intermediate layer on the support substrate in a first region, a piezoelectric layer on the intermediate layer, a functional element on the piezoelectric layer, and an insulating layer. The insulating layer is located on the support substrate in a second region adjacent to the first region. A surface roughness of the support substrate in the second region is greater than a surface roughness of the support substrate in the first region.

Piezoelectric device

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Elastic wave device and method for manufacturing the same

An acoustic wave device includes a silicon substrate, a piezoelectric layer, and an IDT electrode. Each of the silicon substrate and the piezoelectric layer includes first and second opposed main surfaces. The IDT electrode is on the first main surface of the piezoelectric layer, and includes first and second electrode fingers. When a wavelength of an acoustic wave determined by an electrode finger pitch of the IDT electrode is denoted as λ, a distance between the first main surface of the silicon substrate and the second main surface of the piezoelectric layer in a thickness direction of the silicon substrate is less than about 0.84λ. The first main surface of the silicon substrate is rougher than the first main surface of the piezoelectric layer.

Acoustic wave device

An acoustic wave device includes a support substrate, a piezoelectric body layer, an interdigital transducer electrode, and an external connection electrode. The piezoelectric body layer is on the support substrate. The interdigital transducer electrode is on the piezoelectric body layer. The external connection electrode is electrically connected to the interdigital transducer electrode. The external connection electrode does not overlap the piezoelectric body layer in a plan view from a thickness direction of the support substrate. The support substrate includes a hollow portion. The hollow portion is at least on an end portion of the support substrate in a plan view from the thickness direction.

Acoustic wave device and electronic component module

In an acoustic wave device, a piezoelectric body is directly or indirectly provided on a high acoustic velocity material layer, an interdigital transducer electrode is directly or indirectly provided on the piezoelectric body, the interdigital transducer electrode includes a first busbar, a second busbar spaced away from the first busbar, a plurality of first electrode fingers, and a plurality of second electrode fingers, and a weighting is applied to the interdigital transducer electrode by providing a floating electrode finger not electrically connected to the first busbar or the second busbar or applied by providing an electrode finger formed by metallizing a gap between the first electrode fingers or a gap between the second electrode fingers to integrate the first electrode fingers or the second electrode fingers.

Acoustic wave device, filter, multiplexer, radio-frequency front-end circuit, and communication device

In an elastic wave device, a multilayer film including a piezoelectric thin film is provided on a support substrate, an interdigital transducer electrode is provided on one surface of the piezoelectric thin film, a wiring electrode is connected to the interdigital transducer electrode, the wiring electrode includes a lead electrode portion and a pad electrode portion, an external connection terminal is located above the pad electrode portion, the external connection terminal is electrically connected to the pad electrode portion, and the external connection terminal is bonded onto the pad electrode portion on the support substrate so that at least the piezoelectric thin film of the multilayer film is not present below the pad electrode portion.

Elastic wave device and manufacturing method thereof

An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO, and Euler angles (&#x3c6;, &#x3b8;, &#x3c8;) of the LiTaOfall within specific ranges.

Elastic wave device and manufacturing method for same

A method for manufacturing an elastic wave device includes a step of preparing a supporting substrate, a step of forming a high-acoustic-velocity film on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a step of forming a low-acoustic-velocity film on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, a step of forming the piezoelectric film on the low-acoustic-velocity film, and a step of forming an IDT electrode on a surface of the piezoelectric film.

Method of manufacturing elastic wave device

An antenna that resonates at each of at least operating two frequency bands includes a first LC parallel circuit having a first impedance between a feeding element and a feeding circuit, and a second LC parallel circuit having a second impedance between a parasitic element and ground. The feeding element and the parasitic element are configured such that multiple resonant frequencies are positioned between the two operating frequency bands in a case where the impedances of the first and second LC parallel circuits are set to 0, and the LC parallel circuits having the first and second impedances cause the multiple resonance frequencies to shift to an operating frequency band on the lower frequency side and to the higher frequency side, of the two operating frequency bands.

Multiband antenna and mounting structure for multiband antenna

An antenna includes a base, a first radiating element, and second radiating element. The first radiating element is open at a first end thereof, is connected to a ground point at a second end thereof, and resonates in a substantially &#xbc; wavelength mode in a first communication frequency band. A feed line is connected between a first feed point and a predetermined position between the first end and the second end of the first radiating element. The second radiating element has a first end that is a second feed point, a second end that is connected to the ground point, and resonates in a substantially &#xbd; wavelength mode in a second communication frequency band. A distance from the ground point to the second feed point is longer than a distance from the ground point to the first feed point.

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Nagaokakyo, Japan

Munehisa Watanabe