Hitachi, Ltd.

Hitchi, Ltd.

Munehisa Mitsuya

Motoyasu Terao

Yasuo Wada

Yoshiki Kato

Shinkichi Horigome

Heigo Ishihara

Hajime Fukke

Seiji Heike

Waichi Nagashiro

Katsuyoshi Chiba

Teruo Tsunoda

Sakae Ota

Seiichi Kondo

Teruaki Kobayashi

Yasushi Tomioka

Toshimitsu Kaku

Kazuo Shigematsu

Satoshi Watanabe

Tomihiro Hashizume

Yoshio Taniguchi

Yoichi Oba

Tsuneo Ichiguchi

Mitsushi Endo

Mark I Lutwyche

Mark Lutwyche

A device according to the present invention is a miniaturized efficient device wherein electromechanical transduction is enabled and which is provided with at least an integrated electrostatic actuator provide with an actuator in which a fixed portion and a movable portion are opposite, a plurality of which are arranged and the relative amount of movement of which is controlled by controlling electrostatic force operating between both, the movable portion moved by the integrated electrostatic actuator and a portion connected to the movable portion which can be operated mechanically. The probe of a scanning probe microscope is provided to the movable portion of the above actuator. The above transducer is provided with the structure in which a large number of such actuators are arranged two- or one-dimensionally.

Micro-fabricated device with integrated electrostatic actuator

A buffer circuit ID provided for connecting an atom level device (for example, an Atom Relay Transistor circuit), formed by arranging atoms in a predetermined pattern, to a device such as a semiconductor device and a quantum device. The buffer circuit can be formed as a voltage or current amplification circuit. The voltage amplification circuit may be a single electron transistor circuit, and the current amplification circuit may be an avalanche amplification device circuit. The Atom Relay Transistor circuit and the device such as a semiconductor device and a quantum device are formed substantially on the same flat insulating member, and connected by a fine connection structure made of a conductive body such as metal.

Buffer of fine connection structure for connecting an atom level circuit

A surface of an insulator or semiconductor substrate is irradiated with a beam such as an electron beam, an electromagnetic wave beam, an ion beam, etc. to excite carriers so as to form an electrical conductive layer on the surface of and in the inside of the substrate to thereby make it possible to perform observation and micro working on the insulator by using a scanning tunneling microscope.

Solid surface observation method and apparatus therefor, and electronic

An information recording member comprising a substrate, and a thin film formed on the substrate with or without an intermediate layer therebetween and irradiated with a recording beam to make an aperture or recess in the thin film, is disclosed in which the thin film is a crystalline film and has a composition expressed by a general formula Se.sub.x Te.sub.y M.sub.z, where x, y and z are given by formulae 0.02.ltoreq.x.ltoreq. 0.35, 0.50.ltoreq.y.ltoreq.0.98 and 0.ltoreq.z.ltoreq.0.45, respectively, and M indicates at least one element selected from the group consisting of As, Sb, Bi, S, Si, Ge, Sn, Pb, Al, Ga, In, Tl, Zn, Cd, Au, Ag, Cu, Ni, Pd, Rh, Cr, Mo, W and Ta, and in which the thin film does not deteriorate to such an extent as seen in conventional recording films when a time has elasped, since the thin film is crystalline.

Information recording member and method of fabricating the same

A recording medium in which a substrate, an inorganic material layer adapted to absorb light and generate heat, a first organic material layer made of an organic matter containing metal, and a second organic material layer adapted to be deformed or removed by heat are successively stacked. A metal salt of an organic acid, or organic metal compound etc. are employed for the first organic material layer. Owing to the presence of this layer, the recording medium exhibits a stability against changes in the ambient temperature.

Recording medium

Disclosed is a recording member which comprises a substrate and a recording layer containing at least selenium and at least one element selected from the group consisting of tellurium and bismuth, wherein the selenium content is higher in the vicinity of the surface of the recording layer and/or in the vicinity of the interface between the recording layer and the substrate than the average selenium content in other portions. By virtue of the presence of this high selenium content portion, the oxidation resistance and water resistance are improved, and a recording member having stable characteristics can be obtained.

Recording member

A composition of magnetic recording media consisting of a ferromagnetic powder such as .gamma.-Fe.sub.2 O.sub.3, a binder and single crystal alumina as a reinforcing agent. Single crystal .alpha.-alumina is preferably used as said single crystal alumina and its amount is preferably from 1 to 20% by weight based on the magnetic powder.

Composition of magnetic recording media

A method of manufacturing a paint composite for magnetic films wherein a mixture consisting of a magnetic powder, a polymer such as polyvinylbutyral, and a solvent is ground under a shear stress of 10-400 kg/cm.sup.2, and the ground mixture has a solvent, an epoxy resin and a phenol resin added thereto and is further ground. When a magnetic disk is produced using a paint which has been obtained by executing the first grinding under a shear stress of 10-400 kg/cm.sup.2 with a kneader or the like, it is endowed with excellent electric characteristics and surface flatness.

Method of manufacturing a paint composite for magnetic films

A process for the preparation of a magnetic recording medium comprising;

Process for the preparation of magnetic recording medium

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Hachioji, Japan

Munehisa Mitsuya