Hitachi Chemical Company, Ltd.

Munehiro Oota

Shigeru Yoshikawa

Eiichi Satou

Toshio Takizawa

Shigeru Nobe

Takashi Shinoda

Masayuki Hanano

Kanshi Chinone

Takaaki Tanaka

Tomohiro Iwano

Takahiro Yoshikawa

Masato Fukasawa

Hisataka Minami

Yousuke Hoshi

Toshiaki Akutsu

Kazuhiro Enomoto

Tadahiro Kimura

Masanobu Habiro

Takaaki Matsumoto

A polishing liquid for CMP, comprising: an abrasive grain including a cerium-based compound; a 4-pyrone-based compound; a polymer compound having an aromatic ring and a polyoxyalkylene chain; a cationic polymer; and water.

Polishing liquid for CMP, and polishing method

One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2&#x3b8;=27.000 to 29.980&#xb0; in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36&#xb0;, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 &#x3bc;m or greater is 5000&#xd7;10/mL or less.

Polishing liquid for CMP, polishing liquid set for CMP, and polishing method

Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of &#x2014;COOM group, -Ph-OM group, &#x2014;SOM group and &#x2014;POMgroup, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.

Polishing liquid and method for polishing substrate using the polishing liquid

The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

Polishing solution for CMP and polishing method using the polishing solution

An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an ILD film, aggregation of an abrasive grain is difficult to occur, and high flatness is obtained, and provide a polishing method using the same. The polishing liquid for CMP according to the present invention is a polishing liquid for CMP containing an abrasive grain, an additive, and water, wherein the abrasive grain comprises a cerium-based particle, and the additive comprises a 4-pyrone-based compound and at least one of a nonionic surfactant or a cationic surfactant: [wherein X, X, and Xeach independently represent a hydrogen atom or a monovalent substituent].

Polishing liquid for CMP and polishing method using the same

The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

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Hitachi, Japan

Munehiro Oota