Fujitsu Corporation

Other

Shinko Electric Industries Co., Ltd.

Fujitsu Microelectronics Limited

Muneharu Morioka

Hirohisa Matsuki

Norio Fukasawa

Kenichi Nagashige

Yuzo Hamanaka

Makoto Iijima

Masaru Nukiwa

Hideharu Sakoda

Seiji Ueno

Toshiyuki Motooka

Mamoru Suwa

Atsushi Kikuchi

Yasuhiro Shinma

Mitsuyoshi Imai

Masaki Sakaguchi

Hideki Toya

Naoki Yamabe

Junichi Kasai

Shigeyuki Maruyama

Masanori Onodera

Yasunori Fujimoto

Yoshiyuki Yoneda

Toshimi Kawahara

Masashi Takenaka

Masaharu Minamizawa

Masao Sakuma

Yoshihiko Ikemoto

Kazuyuki Imamura

Mitsunada Osawa

Tadashi Uno

Nobutaka Shimizu

Yoshimi Suzuki

Masahiro Yonemochi

Yoshiyuki Kimura

Osamu Yamaguchi

Takumi Ihara

Yukihiro Kuriki

Masaki Uchida

A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Method of fabricating semiconductor device

Semiconductor device having a ball grid array and a fabrication process thereof

Method of fabricating a semiconductor device having a groove formed in a resin layer

A method includes a resin sealing step of placing, in a cavityof a mold, a substrateto which semiconductor elementson which bumpsare arranged, a resin sealing step of supplying resinto positions of the bumpsso that a resin layersealing the bumpsis formed, a protruding electrode exposing step of exposing at least ends of the bumpssealed by the resin layerso that ends of the bumpsare exposed from the resin layer, and a separating step of cutting the substratetogether with the resin layerso that the semiconductor elementsare separated from each other.

Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device

A manufacturing method of a semiconductor device incorporating a passive element includes the steps as follows: a redistribution board forming step forms a redistribution board incorporating the passive element on a base board; a semiconductor element mounting step mounts at least one semiconductor element formed on an opposite side surface of the redistribution board with regard to the base board; a base board separating step separates the base board from the redistribution board and exposes the other surface of the redistribution board; a redistribution board mounting step mounts the redistribution board on a package board via electrode pads exposed from the other surface of the redistribution board.

Manufacturing method of a semiconductor device incorporating a passive element and a redistribution board

In order to improve adhesion between a plated film which functions as an external connection terminal of a semiconductor device and a surface of a resin protuberance and to improve reliability, a carrier substrate includes a metal substrate which is shaped into a sheet form, to which a semiconductor chip is fixed, and which is removed before the semiconductor device is completed, a recess formed at a position of the metal substrate corresponding to the resin protuberance and having a rugged bottom surface and/or a rugged side surface, and a plated film formed on the inner surface of the recess.

Resin for semiconductor wire

A method for manufacturing a substrate, including adhering an adhesive layer to an organic insulation substrate to form a first part; forming a via hole in the first part such that the via hole penetrates the first part; forming a conductive metal film so that the conductive metal film covers the via-hole on one side of the first part; using an electrolytic plating process, where the conductive metal Film is used as an electrode, to form a metal via member within the via hole and to form an inter-layer wire; and removing an entirety of the conductive metal film without removing the inter-layer formed by the electrolytic plating process; repeating steps (a)-(e) for a second part; and thereafter attaching the first part to the second part.

Method of forming an insulative substrate having conductive filled vias

A multilayer wiring substrate includes differential signal wires placed within a first insulating layer between a first power-supply plane and a first ground plane; and general signal wires placed within a second insulating layer between a second power-supply plane and a second ground plane. In the multilayer wiring substrate, the differential signal wires are placed in a different plane from a plane having each of the general signal wires so that the different plane includes a first area having the differential signal wires, and a second area having one of the second power-supply plane and the second ground plane. The general signal wires are placed in a vertical direction of the second area in a laminated state so that each of the general signal wires is placed between the second power-supply plane and the second ground plane.

Multilayer wiring substrate having differential signal wires and a general signal wire in different planes

A mold for press-molding a resin package body includes a lower mold and an upper mold, wherein the upper mold includes a press plate held in a tiltable manner with respect to a press head used for urging the upper mold against the lower mold and a lock mechanism for locking the press plate. The lower mold includes an inner die carrying a semiconductor device and a resin tablet and an outer die surrounding the inner die in a manner movable up and down with respect to the inner die. In operation, the press plate is first engaged with the outer die in the unlocked state to achieve an exact parallelism with respect to the inner die, and after locking the press plate and melting the resin tablet, the press plate is urged further toward the inner die while simultaneously lowering the outer die such that the space formed by the lower die, outer die and the press plate for accommodating a semiconductor chip is collapsed.

Mold for fabricating semiconductor devices

A semiconductor device includes a semiconductor element on which a plurality of bumps are formed and a substrate having a first surface on which a plurality of protruding electrodes are protrudingly formed in correspondence to an arrangement of the bumps, and a second surface on which balls serving as mounting terminals are formed. The semiconductor element is bonded in a face-down manner to the substrate with the protruding electrodes being embedded into the bumps. Alloy layers having materials identical to those of the bumps and the protruding electrodes are formed on interfaces of the bumps and the protruding electrodes.

Semiconductor device and method of producing the same

A semiconductor device includes a multi-flexible substrate and semiconductor chips mounted thereon. The multi-flexible substrate is configured such that organic insulation substrate layers and filmy adhesive layers are alternatively stacked together and wiring layers formed therein are interconnected by means of vias. Each of the vias consisting of a via-hole which is formed penetrating both the organic insulation substrate layers and the filmy adhesive layers and a metal via member which is provided in the via-hole and made of an identical material. A method of manufacturing the multi-flexible substrate for the semiconductor device is also disclosed.

Semiconductor device and method for manufacturing substrate of the same

In order to improve adhesion between a plated film which functions as an external connection terminal of a semiconductor device and a surface of a resin protuberance and to improve reliability, a carrier substrate includes a metal substrate which is shaped into a sheet form, to which a semiconductor chip is fixed, and which is removed before the semiconductor device is completed, a recess formed at a position of the metal substrate corresponding to the resin protuberance and having a rugged bottom surface and/or a rugged side surface, and a plated film formed on the inner surface of the recess

Carrier substrate for producing semiconductor device

Growing community of inventors

Kawasaki, Japan

Muneharu Morioka