Fujitsu Quantum Devices Limited

Muneharu Gotoh

Osamu Baba

Yutaka Mimino

Yoshio Aoki

A high-frequency semiconductor device for power amplification has a comb-teeth electrode on each of active regions formed on the front surface of the semiconductor substrate. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a plurality of rectangular-shaped active regions arranged side by side on the front surface of the semiconductor substrate, each of the active regions having interdigited gate, drain and source electrodes thereon which are connected to the respective pads by multilayer interconnection technique. Additionally, the source potential is fed from the back surface of the substrate through a metal plugged via-hole.

Semiconductor device having divided active regions with comb-teeth electrodes thereon

A structure for eliminating the influence of an antenna line connected to the patch electrode on the antenna characteristics of a patch antenna built in an MMIC is disclosed. A through-hole is formed in the antenna ground plane which is provided under the patch electrode with an interlayer insulation film therebetween, the antena line is provided in the side opposite to the patch electrode with respect to the antena ground plane, and the patch electrode and antenna line are connected to each other with a conductor passing through the trough-hole.

High-frequency semiconductor device

A structure for preventing MMICs (Monolithic Microwave Integrated Circuits) from deterioration in the high-frequency transmission characteristics thereof, which results from mechanical pressure applied to the pads during the wire-bonding thereto for external connection. The structure includes a groove provided in the surface of the interlayer insulation film around each of the pads. The line conductor for transmitting high-frequency signals is free from the peeling off or bending thereof, which is caused by the deformation in the interlayer insulation films during when the mechanical pressure applied to the pads, and thus, the change in the transmission characteristics of the line conductor can be minimized, and the reliability of MMICs can be improved.

High frequency semiconductor device

A multilayer wiring structure for MMICs includes a power-supply wiring formed of a multilayer wiring (a plurality of power-supply lines). The wires are interconnected by throughholes. A power-supply current is divided and supplied to the lines. A large current can be supplied to the entirety of the multilayer wiring, even when the width of each of the lines is reduced. The multilayer wiring structure has an improved degree of freedom in the layout of wiring.

A high frequency semiconductor device includes a ground plate, an insulating layer, a power-supply conductor, an insulating interlayer, and a strip line as a line conductor. The power-supply conductor is disposed above the ground plate, with the insulating layer provided therebetween. The ground plate and the power-supply conductor have a capacitance formed therebetween. Thus, the line conductor regards the power-supply conductor as having a potential identical to that of the ground plate. This makes it possible to lay out the line conductor without considering the arrangement of the power-supply conductor. In other words, by two-dimensionally overlapping a microstrip line and a power-supply conductor in an MMIC, the degree of freedom in the device layout can be increased.

In a high frequency semiconductor device, a shield plate which is connected to the ground potential is provided above an MMIC structure including line conductors, with an insulating interlayer provided therebetween. By using the shield plate to shield the MMIC, interference caused by external electromagnetic waves or leakage of electromagnetic waves to the exterior can be reduced in a chip alone.

A high frequency semiconductor device includes semiconductor elements provided on a semiconductor substrate, a surface insulating layer for covering the semiconductor elements, at least one wiring layer which is provided above the surface insulating layer, with at least one insulating interlayer provided therebetween, and which combines with the ground potential to form transmission line, and at least one heat-radiating stud which is provided in at least one throughhole so as to penetrate said insulating interlayers and so as not to penetrate said surface insulating layer.

A semiconductor integrated circuit has a 3-dimmensional interconnection line structure for high-speed operation. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a 3-dimmensional tournament tree shaped multilayer interconnection lines, wherein a single electric feeding point on a top surface of the MMIC is divided, layer by layer, into plural electrodes on the semiconductor substrate of the MMIC via a plurality of laminated interconnection layers and vertical interconnection layers therebetween shaped like a tournament tree.

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Yamanashi, Japan

Muneharu Gotoh