Shinko Electric Industries Co., Ltd.

Muneaki Kure

Kazumitsu Seki

Yoshihito Miyahara

Takashi Yoshie

Harunobu Sato

Masayuki Okushi

Kesayuki Sonehara

Yosuke Aruga

Akemi Nozaki

A lead frame includes a conductive member, a plating layer, and an oxide film. The conductive member includes a rough surface. The plating layer is formed on the rough surface and configured to be connected to a semiconductor element. The oxide film covers the rough surface at least around the plating layer.

Lead frame and semiconductor device

A lead frame for a resin-seal type semiconductor device, which includes a semiconductor element having an electrode, a bonding wire connected to the electrode of the semiconductor element, and a sealing resin covering and sealing the semiconductor element and the bonding wire. The lead frame includes a substrate frame, a four-layer plating, and a three-layer plating. The substrate frame include leads, a connection region, which is sealed by the sealing resin and connected to the bonding wire, and an exposed region, which is not sealed by the sealing resin. A four-layer plating is applied to a portion of the substrate frame that is to be connected to the bonding wire and sealed by the sealing resin. A three-layer plating is applied to an exposed region of the substrate frame that is exposed from the sealing resin.

A lead frame includes a lead frame bodyhaving a die padto which a semiconductor chipis bonded and a plurality of leadsarranged around the die padand made of Cu or an alloy containing Cu, and a metallic film formed on the lead frame bodyand to connected to a metallic wireconnected to the electrode padof the semiconductor chip. The metallic film is an Ag-plated filmwith nanoparticlesarranged in gapsamong Ag crystal grains

Lead frame, method for manufacturing the same and semiconductor device

A conductor substrate for mounting a semiconductor element, at least a portion thereof mounting the semiconductor element being sealed with an insulating resin, wherein an uppermost surface layer of the conductor substrate comprises copper or an alloy thereof, and the conductor substrate is partly or entirely covered with a layer of copper oxide containing a hydroxide formed upon the surface treatment of the conductor substrate and a process of producing the conductor substrate as well as a process for the production of a semiconductor device using the conductor substrate.

Conductor substrate, semiconductor device and production method thereof

A leadframe for a semiconductor device of the present invention is a leadframe for a semiconductor device having a stage section where a semiconductor chip is to be mounted, an inner lead section connected to the stage section, and an outer lead section connected to the inner lead section. The leadframe has (1) a nickel (Ni) layer, (2) a palladium (Pd) or palladium alloy layer, (3) a tin (Sn) or tin alloy layer or a zinc (Zn) or zinc alloy layer, or, and (4) a gold (Au) layer, or, all of which are formed on a base material B forming the leadframe in sequence from the surface of the leadframe.

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Nagano, Japan

Muneaki Kure