Electronics and Telecommunications Research Institute

Mun-Yang Park

Hyun-Kyu Yu

Cheon-Soo Kim

Seon-Ho Han

Hyoung-Seok Oh

Min-Hyung Cho

Seung-Chul Lee

Yong-Sik Youn

Provided is a wireless transceiving apparatus for variability of signal processing band, in which at least one resonator of an analog processor and a VCO are simultaneously controlled using a frequency synthesizer, and a frequency of the VCO and a resonance frequency of the analog processor are controlled to have a rational number ratio, thereby capable of varying the signal processing band. The wireless transceiving apparatus includes: an analog processor having a plurality of resonators on a path of transmission/reception signals, for performing analog signal processing; a digital processor for performing digital signal processing on an output signal of the analog processor or data to be transmitted to the analog processor; and a frequency synthesizer for providing a local oscillation (LO) frequency and a controlling signal to the resonators of the analog processor so as to vary a signal processing band of the analog processor.

Wireless transceiving apparatus for variability of signal processing band

Provided is a power amplifier which fits to a deep-submicron technology in radio frequency wireless communication. The power amplifier includes a cascode including a first transistor which receives and amplifies an input signal, and a second transistor which is connected to the first transistor in series and operated by a DC bias voltage; a third transistor which is connected between the cascode and an output end, operated by a dynamic gate bias and outputting a signal; and a voltage divider which includes first and second capacitors that are connected between the output end, i.e. a drain of the third transistor, and a ground in series, and provides the dynamic bias to a gate of the third transistor.

Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique

Provided is a low noise amplifier with a common source and a source degeneration, which has linearity, power gain, noise factor, and lossless input matching. The low noise amplifier includes: a first inductor having one terminal connected to an input terminal receiving a signal; a second inductor having one terminal connected to a ground; a MOS transistor having a gate connected to the first inductor, a source connected to the other terminal of the second inductor, and a drain transmitting a signal; and a variable capacitor connected between the source and gate of the MOS transistor and varying an input matching frequency at the input terminal.

Low noise amplifier for wideband tunable matching

There is provided a quadrature modulation transmitter which is capable of solving several problems of the conventional transmitter while performing the same function as the heterodyne transmitter or the digital IF transmitter, in which a circuit structure is simplified and a power consumption is reduced compared with the conventional transmitter. The quadrature modulation transmitter includes: a digital processing block for receiving an I-channel data, a Q-channel data and a clock signal, modulating the I-channel data or an inverted I-channel data into a first analog signal by means of an I-channel DAC according to a switching of an I-clock signal identical to the clock signal, and modulating the Q-channel data and an inverted Q-channel data into a second analog signal by means of a Q-channel DAC according to a switching of a Q-clock signal, the Q-clock signal being an inverted clock signal; and an analog processing block for receiving the first and second analog signals from the digital processing block, adding the first and second analog signals, converting the added signal into an RF domain signal through a mixing operation, and amplifying and transmitting the RF domain signal.

Quadrature modulation transmitter

An amplifier including an amplifier transistor that operates in an active region has main current flowing therethrough according to input voltage, and a linear transistor that is driven by offset positive-polarity input voltage to operate in a linear region and has auxiliary current flowing therethrough. The main current and auxiliary current are added to become output current. The offset positive-polarity voltage corresponds to the sum of AC component of the input voltage and an offset DC voltage. Here, a transistor stacked on the linear transistor is coupled to the amplifier transistor to secure the linear region operation of the linear transistor. The stacked transistor is driven by a voltage having polarity opposite to that of the input voltage.

Growing community of inventors

Daejon, South Korea

Mun-Yang Park