Applied Materials, Inc.

Mun Kyu Park

Timothy J Miller

Jingmei Liang

Sean M Seutter

Praket Prakash Jha

Sanjay G Kamath

Kyu-Ha Shim

Jun Seok Lee

Jung Chan Lee

Deven Matthew Raj Mittal

Hien Minh Le

Sungho Jo

Euhngi Lee

Chih-Chiang Chuang

Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.

Plasma treatment process to densify oxide layers

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

Deuterium-containing films

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San Jose, CA, United States of America

Mun Kyu Park