Samsung Electronics Co., Ltd.

Mun-jun Kim

Hong-gun Kim

Ha-Young Yi

Seung-Heon Lee

Young-Min Ko

Youn-seok Choi

Jong-myeong Lee

Byoung-Deog Choi

Jun-won Lee

A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

Semiconductor device including a plurality of electrodes and supporters

A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate.

Oxide film, integrated circuit device, and methods of forming the same

Growing community of inventors

Suwon-si, South Korea

Mun-jun Kim