Gwangju Institute of Science and Technology

Mun-Do Park

Dong-Seon Lee

Duk-Jo Kong

Dong-Ju Seo

Jun-Youb Lee

Chang-Mo Kang

Jun-Yeob Lee

Won-Seok Seong

A sidewall light emitting ultraviolet light emitting diode and a method of manufacturing thereof are disclosed. A light emitting structure is formed in an active region recessed from a substrate surface, and the light emitting structure is formed by growth in a direction parallel to the surface of the substrate. Also, a reflective metal layer is formed above or below the light emitting structure such that ultraviolet light can be released in a second direction perpendicular to a first direction which is the growth direction of the light emitting structure.

Ultraviolet light emitting diode and method of manufacturing the same

Disclosed is a method for growing a nitride-based semiconductor with high quality, the method including: forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; performing dry etching on the first mask layer and the second mask layer to form an opening in which a part of the substrate is exposed; performing selective wet etching on the first mask layer in the opening to form a recess in which a part of the substrate is exposed; depositing a third mask layer in the recess; and growing a nitride-based semiconductor from the exposed part of the substrate on sides of the third mask layer and expanding the growth via the opening.

Method for growing nitride-based semiconductor with high quality

Growing community of inventors

Gwangju, South Korea

Mun-Do Park