Infineon Technologies Ag

Muhammed Shafi Pallachalil

Hermann Wendt

Alois Gutmann

Markus Naujok

Erdem Kaltalioglu

Moosung Chae

Sunoo Kim

A structure having air gaps between interconnects is disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.

Semiconductor devices and structures thereof

In one embodiment, a semiconductor device includes a first metal line disposed in a first metal level above a substrate. A second metal line is disposed in a second metal level disposed over the first metal level. A third metal line is disposed in a third metal level disposed over the second metal level. A through level via contacts the first metal line and the third metal line.

Through level vias and methods of formation thereof

Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.

Methods of manufacturing semiconductor devices

Methods of manufacturing semiconductor devices and structures thereof

Growing community of inventors

Wappingers Falls, NY, United States of America

Muhammed Shafi Pallachalil