Hewlett-packard Development Company, L.p.

Muhammad Shakeel Qureshi

Frederick A Perner

Matthew D Pickett

Richard J Carter

Wei Yi

Richard Stanley Williams

John Paul Strachan

Jianhua Yang

Gilberto Medeiros Ribeiro

Frekerick Perner

A method of switching a memristive device in a two-dimensional array senses a leakage current through the two-dimensional array when a voltage of half of a switching voltage is applied to a row line of the memristive device. A leakage compensation current is generated according to the sensed leakage current, and a switching current ramp is also generated. The leakage compensation current and the switching current ramp are combined to form a combined switching current, which is applied to the row line of the memristive device. When a resistance of the memristive device reaches a target value, the combined switching current is removed from the row line.

Method and circuit for switching a memristive device in an array

A field-programmable analog array (FPAA) includes a digital signal routing network, an analog signal routing network, switch elements to interconnect the digital signal routing network with the analog signal routing network, and a configurable analog block (CAB) connected to the analog signal routing network and having a programmable resistor array. The switch elements are implemented via digital memristors, the programmable resistor array is implemented via analog memristors, and/or antifuses within one or more of the digital signal routing network and the analog signal routing network are implemented via digital memristors.

Field-programmable analog array with memristors

A programmable current-limited voltage buffer. The programmable current-limited voltage buffer includes at least one current-bias circuit, an inverter, a write-current set control circuit, and an adaptive current limiter. The inverter is coupled to the current-bias circuit and a reference-voltage source, and is configured to couple a row line to either the current-bias circuit, or the reference-voltage source, in response to an input signal. The adaptive current limiter is coupled to the current-bias circuit and to the write-current set control circuit, and is configured to limit current flowing through the memory element in a write operation. An integrated circuit device is also provided, along with a method for current limiting a memory element during switching in an array of memory elements.

Programmable current-limited voltage buffer, integrated-circuit device and method for current-limiting a memory element

A memory array with write feedback includes a number of row lines intersecting a number of column lines, a memory element connected between one of the row lines and one of the column lines, an electrical condition supply to be selectively applied to one of the row lines; and a feedback control loop to control an electrical condition supplied by the electrical condition supply. A method for setting the state of a memory element within a memory array includes applying an electrical condition to the memory element within the memory array, sensing a resistive state of the memory element, and controlling the electrical condition based on the sensed resistive state to cause the memory element to reach a target resistance.

Memory array with write feedback

A memristor-protection integrated circuit. The memristor-protection integrated circuit includes a first current-bias circuit, a second current-bias circuit, an inverter, and a current limiter. The first and second current-bias circuits are configured to be coupled to first and second power-supply rails, respectively. The inverter is coupled to the first current-bias circuit and to the second current-bias circuit, and is configured to couple at least one memristor to at least one of the first current-bias circuit and the second current-bias circuit in response to an input signal applied to the inverter. The current limiter is coupled to the first current-bias circuit and coupled to the second current-bias circuit, and is configured to limit current flowing through the memristor.

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Santa Clara, CA, United States of America

Muhammad Shakeel Qureshi