Globalfoundries Inc.

Muhammad Rahman

Shesh Mani Pandey

Srikanth Balaji Samavedam

One illustrative method disclosed herein includes, among other things, forming a fin in a semiconductor substrate, forming a gate structure around the fin and, after forming the gate structure, forming a final source/drain cavity in the fin, wherein the source/drain cavity includes an upper innermost edge and a lower innermost edge, both of which extend laterally under at least a portion of the gate structure, and wherein the lower innermost edge extends laterally further under the gate structure than does the upper innermost edge. The method also includes performing an epitaxial growth process to form an epi semiconductor material in the final source/drain cavity.

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Clifton Park, NY, United States of America

Muhammad Rahman