Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Muhammad Ali

Alfred Lell

Bernhard Stojetz

Sven Gerhard

Harald König

Harald Koenig

Georg Brüderl

John Brückner

Thomas Adlhoch

Christoph Eichler

In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, and a thermal decoupling structure in a region between two adjacent individual emitters, wherein the decoupling structure includes an electrically conductive cooling element located on the contact side and completely covering a contiguous cooling region of the contact side, wherein the cooling element is completely electrically isolated from the semiconductor layer sequence and thermally coupled to the semiconductor layer sequence along the cooling region, and wherein the cooling region has a width, measured along the lateral transverse direction, which is at least half a width of an adjacent contact region.

Edge-emitting laser bar

The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current Ifed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop Uoccurs at the section and at least part of said operating current Iflows through the assigned current regulating element and experiences an electrical resistance Rin the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature Thas a positive temperature coefficient dR/dT|. Alternatively or additionally, the resistance Ris greater than |ΔU/I, wherein ΔUis the change in the voltage drop Uat the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature Tby 1 K.

Diode laser and method for operating a diode laser

In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.

Semiconductor laser and production method for a semiconductor laser

In one embodiment, the semiconductor laser () comprises a semiconductor layer sequence () based on the material system AlInGaN with at least one active zone () for generating laser radiation. A heat sink () is thermally connected to the semiconductor layer sequence () and has a thermal resistance towards the semiconductor layer sequence (). The semiconductor layer sequence () is divided into a plurality of emitter strips () and each emitter strip () has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips () are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

Semiconductor laser, operating method for a semiconductor laser, and method for determining the optimum fill factor of a semiconductor laser

A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

Method of producing a semiconductor laser and semiconductor laser

An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

A semiconductor laser () is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

Semiconductor laser and manufacturing method for a semiconductor laser

A method of manufacturing a semiconductor laser including providing a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, applying a continuous contact layer having at least one first partial region and at least one second partial region on a bottom side of the substrate opposite the semiconductor layer sequence, and locally annealing the contact layer only in the at least one first partial region.

Growing community of inventors

Wuppertal, Germany

Muhammad Ali