Samsung Electronics Co., Ltd.

Mu-Tien Chang

Hongzhong Zheng

Dimin Niu

Jangseok Choi

Sun Young Lim

Indong Kim

Krishna Teja Malladi

Hyun-Joong Kim

Won-hyung Song

Craig Hanson

Chaohong Hu

Frederic Sala

Prasun Gera

Youngjin Cho

Heehyun Nam

Sompong Paul Olarig

Youngsik Kim

Sun-Young Lim

Kyung-Chang Ryoo

Dongyan Jiang

Liang Yin

Tyler Stocksdale

A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.

Coordinated in-module RAS features for synchronous DDR compatible memory

A high bandwidth memory system. In some embodiments, the system includes: a memory stack having a plurality of memory dies and eight 128-bit channels; and a logic die, the memory dies being stacked on, and connected to, the logic die; wherein the logic die may be configured to operate a first channel of the 128-bit channels in: a first mode, in which a first 64 bits operate in pseudo-channel mode, and a second 64 bits operate as two 32-bit fine-grain channels, or a second mode, in which the first 64 bits operate as two 32-bit fine-grain channels, and the second 64 bits operate as two 32-bit fine-grain channels.

Bandwidth boosted stacked memory

A method of correcting a memory error of a dynamic random-access memory module (DRAM) using a double data rate (DDR) interface, the method includes conducting a memory transaction including multiple bursts with a memory controller to send data from data chips of the DRAM to the memory controller, detecting one or more errors using an ECC chip of the DRAM, determining a number of the bursts having the errors using the ECC chip of the DRAM, determining whether the number of the bursts having the errors is greater than a threshold number, determining a type of the errors, and directing the memory controller based on the determined type of the errors, wherein the DRAM includes a single ECC chip per memory channel.

DRAM assist error correction mechanism for DDR SDRAM interface

A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.

3D-stacked memory with reconfigurable compute logic

A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

Asynchronous communication protocol compatible with synchronous DDR protocol

A method of processing in-memory commands in a high-bandwidth memory (HBM) system includes sending a function-in-HBM instruction to the HBM by a HBM memory controller of a GPU. A logic component of the HBM receives the FIM instruction and coordinates the instructions execution using the controller, an ALU, and a SRAM located on the logic component.

ISA extension for high-bandwidth memory

A memory device includes an array of 2T1C DRAM cells and a memory controller. The DRAM cells are arranged as a plurality of rows and columns of DRAM cells. The memory controller is internal to the memory device and is coupled to the array of DRAM cells. The memory controller is capable of receiving commands input to the memory device and is responsive to the received commands to control row-major access and column-major access to the array of DRAM cells. In one embodiment, each transistor of a memory cell includes a terminal directly coupled to a storage node of the capacitor. In another embodiment, a first transistor of a memory cell includes a terminal directly coupled to a storage node of the capacitor, and a second transistor of the 2T1C memory cell includes a gate terminal directly coupled to the storage node of the capacitor.

Dual row-column major dram

A memory module includes: a non-volatile memory; and an asynchronous memory interface to interface with a memory controller. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

A memory module includes a memory controller including: a host layer; a media layer coupled to a non-volatile memory; and a logic core coupled to the host layer, the media layer, and a volatile memory, the logic core storing a first write group table including a plurality of rows, and the logic core being configured to: receive a persistent write command including a cache line address and a write group identifier; receive data associated with the persistent write command; write the data to the volatile memory at the cache line address; store the cache line address in a selected buffer of a plurality of buffers in a second write group table, the selected buffer corresponding to the write group identifier; and update a row of the first write group table to identify locations of the selected buffer containing valid entries, the row corresponding to the write group identifier.

Growing community of inventors

Santa Clara, CA, United States of America

Mu-Tien Chang