Lextar Electronics Corporation

Everlight Electronics Co., Ltd.

Bell Ceramics Co., Ltd.

Mu-Huai Fang

Ru-Shi Liu

Tzong-Liang Tsai

Yu-Chun Lee

Chi Hsiu Lee

Yi-Ting Tsai

Chieh-Yu Kang

Shu-Fen Hu

Kuang-Mao Lu

Ho Chang

Chaochin Su

Te-Hsin Chiang

Veeramani Rajendran

Yan-Shen Lin

Gabriel Nicolo A De Guzman

Chang-Lung Chiang

Chia-Shen Hsu

An infrared emitting fluoride phosphor and an infrared light emitting device are provided. The infrared emitting fluoride phosphor includes an activation center of Cr. The infrared light emitting device includes a light source and the infrared emitting fluoride phosphor. The light source is disposed to emit a first light, and the first light has a wavelength of 400-700 nm. The infrared emitting fluoride phosphor is configured to be excited by the first light to emit a first infrared ray. The first infrared ray has a wavelength of 650-1000 nm. The infrared light emitting device has a broad emission wavelength, such that it can be applied in variety of sensing device.

Infrared emitting fluoride phosphor and infrared light emitting device

The present invention relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component. The phosphor has the following general formula: LaGaGeO: 3xA, yCr, 5zB, where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; B represents at least one of Sn, Nb, and Ta. For the phosphor, its emission spectrum is within a red visible light region and a near-infrared region when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide reflection spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs to meet requirements of current medical testing, food composition analysis, security cameras, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

Phosphor, method for preparing phosphor, optoelectronic component, and method for producing optoelectronic component

A method for manufacturing a nitride phosphor is provided. The method comprises providing a nitride phosphor formulation and subjecting the nitride phosphor formulation to a hot isostatic pressing step. The nitride phosphor formulation comprises a flux and a phosphor precursor, wherein the flux is a barium-containing nitride. The phosphor precursor comprises two or more metal nitrides, and wherein a plurality of metal elements are present in the nitride phosphor and the two or more metal nitrides contain the plurality of metal elements.

Method for manufacturing nitride phosphor

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Hsinchu, Taiwan

Mu-Huai Fang