Cree Gmbh

Wolfspeed, Inc.

Mrinal Kanti Das

John Williams Palmour

Sei-Hyung Ryu

Henry Lin

Anant Kumar Agarwal

Hudson McDonald Hobgood

Jason Ronald Jenny

Adam Barkley

Lori A Lipkin

Marcelo Schupbach

Michael P Laughner

Qingchun Zhang

Brett Hull

Scott Thomas Sheppard

Valeri Fedorovich Tsvetkov

Helmut Hagleitner

Scott Thomas Allen

Calvin H Carter, Jr

Van Mieczkowski

David Phillip Malta

Robert J Callanan

Jonathan Young

Brian Fetzer

Sumi Krishnaswami

Dave Grider

Matthew Donofrio

Adam William Saxler

Joseph John Sumakeris

Ranbir Singh

Doyle Craig Capell

John M Clayton, Jr

David Philip Malta

Michael Laugher

Lori Lipkin

A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

High speed, efficient SiC power module

High speed, efficient sic power module

The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.

Low switching loss high performance power module

A power module includes a first terminal, a second terminal, and a number of semiconductor die coupled between the first terminal and the second terminal. The semiconductor die are configured to provide a low-resistance path for current flow from the first terminal to the second terminal during a forward conduction mode of operation and a high-resistance path for current flow from the first terminal to the second terminal during a forward blocking configuration. Due to improvements made to the power module, it is able to pass a temperature, humidity, and bias test at 80% of its rated voltage for at least 1000 hours.

Power module with improved reliability

An electronic device includes a drift region having a first conductivity type and a grid including a plurality of doped regions formed in the drift region and having a second conductivity type. The doped regions have a dopant concentration greater than 2.2&#xd7;10cm. Related methods are also disclosed.

Low loss electronic devices having increased doping for reduced resistance and methods of forming the same

A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.

High current, low switching loss SiC power module

High performance power module

Methods of forming a p-channel MOS device in silicon carbide include forming an n-type well in a silicon carbide layer, and implanting p-type dopant ions to form a p-type region in the n-type well at a surface of the silicon carbide layer and at least partially defining a channel region in the n-type well adjacent the p-type region. A threshold adjustment region is formed in the channel region. The implanted ions are annealed in an inert atmosphere at a temperature greater than 1650&#xb0; C. A gate oxide layer is formed on the channel region, and a gate is formed on the gate oxide layer. A silicon carbide-based transistor includes a silicon carbide layer, an n-type well in the silicon carbide layer, and a p-type region in the n-type well at a surface of the silicon carbide layer and at least partially defining a channel region in the n-type well adjacent the p-type region. A threshold adjustment region is in the channel region and includes p-type dopants at a dopant concentration of about 1&#xd7;10cmto about 5&#xd7;10cm. The transistor further includes a gate oxide layer on the channel region, and a gate on the gate oxide layer. The transistor may exhibit a hole mobility in the channel region in excess of 5 cm/V-s at a gate voltage of &#x2212;25V.

Silicon carbide switching devices including P-type channels

Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (V) from about 3.0 kV to about 10.0 kV and a forward voltage (V) of less than about 4.3 V.

High power silicon carbide (SiC) PiN diodes having low forward voltage drops

Methods of forming silicon carbide power devices are provided. An nsilicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the nsilicon carbide layer. A buried region of psilicon carbide is provided on the p-type silicon carbide well region. An nregion of silicon carbide is provided on the buried region of psilicon carbide. A channel region of the power device is adjacent the buried region of psilicon carbide and the nregion of silicon carbide. An nregion is provided on the channel region and a portion of the nregion is removed from the channel region so that a portion of the nregion remains on the channel region to provide a reduction in a surface roughness of the channel region.

Silicon carbide devices having smooth channels

A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.

Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts

Methods of fabricating silicon carbide devices having smooth channels

Growing community of inventors

Durham, NC, United States of America

Mrinal Kanti Das