Jsr Corporation

Tokyo Electron Limited

Motoyuki Shima

Kenji Mochida

Hiroyuki Ishii

Masami Yamashita

Kiyoshi Tanaka

Itaru Kanno

Hisashi Kawano

Meitoku Aibara

Yuki Yoshida

Takahiro Hayama

Kazunori Kusabiraki

Masafumi Yamamoto

Yuji Yada

Yuichiro Katsura

Ryu Matsumoto

Ken Nakakura

Atsushi Nakamura

Hiroshi Ikeda

Yukio Nishimura

Takeo Shioya

Norihiko Sugie

Akimasa Soyano

Hidemitsu Ishida

Kanako Meya

Daichi Matsuda

An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, wherein the treatment film comprises an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

Substrate processing system, substrate cleaning method, and recording medium

An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment includes a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, the treatment film includes an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25&#xb0; C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25&#xb0; C.

Cleaning composition for semiconductor substrate and cleaning method

An immersion upper layer film-forming composition includes [A] a polymer component that includes a polymer (A1), and [B] a solvent, the polymer (A1) including a structural unit (I) that includes a group represented by the following formula (i). The structural unit (I) is preferably a structural unit (I-1) represented by the following formula (1). The polymer component [A] preferably further includes a structural unit (II-1) represented by the following formula (2), the structural unit (II-1) being included in the polymer (A1) or a polymer other than the polymer (A1). The polymer component [A] preferably further includes a structural unit (III) that includes a carboxyl group, the structural unit (III) being included in the polymer (A1) or a polymer other than the polymer (A1). 

Composition for forming liquid immersion upper layer film, and polymer

A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa&#xb7;s and no greater than 150 mPa&#xb7;s at 25&#xb0; C.

Resist pattern-forming method, substrate-processing method, and photoresist composition

An object of the present invention is to be able to obtain a high removing performance of particles. The substrate processing method according to the exemplary embodiment comprises a film-forming treatment solution supply step and a removing solution supply step. The film-forming treatment solution supply step comprising supplying to a substrate, a film-forming treatment solution containing an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent is supplied. The removing solution supply step comprises supplying to a treatment film formed by solidification or curing of the film-forming treatment solution on the substrate, a removing solution capable of removing the treatment film.

Substrate cleaning method and recording medium

A double patterning method includes providing a first resist film on a substrate using a first photoresist composition. The first resist film is exposed. The exposed first resist film is developed using a first developer to form a first resist pattern. A second resist film is provided in at least space areas of the first resist pattern using a second photoresist composition. The second resist film is exposed. The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.

Double patterning method

An upper-layer film-forming composition includes (A) a resin that is soluble in an alkaline aqueous solution, and includes a fluorine atom, and (B) a solvent component that includes (B1) a solvent having a boiling point at 101.3 kPa of 150&#xb0; C. or more and a static surface tension of 23.0 mN/m or less, the upper-layer film-forming composition being used to form an upper-layer film on a photoresist film.

Upper layer-forming composition and resist patterning method

A radiation-sensitive resin composition comprising (A) a resin comprising at least two recurring units of the formulas (1)&#x2013;(6) in the total amount of 5&#x2013;70 mol %, but each in the amount of 1&#x2013;49 mol %, the resin being insoluble or scarcely soluble in alkali, but becoming easily soluble in alkali by the action of an acid, and (B) a photoacid generator. wherein Ris a hydrogen or methyl and Ris a substituted or unsubstituted alkyl group having 1&#x2013;4 carbon atoms. The resin composition is useful as a chemically amplified resist having high transmittance of radiation, sensitivity, resolution, dry etching resistance, and pattern profile.

Radiation-sensitive resin composition

A radiation-sensitive resin composition comprising: (A) a resin comprising a hydroxyl group or carboxyl group, of which the hydrogen atom has been replaced by an acid-dissociable group possessing an alkali dissolution controlling capability, the resin increasing the solubility in an alkaline aqueous solution when the acid-dissociable group dissociates, and a photoacid generator comprising (B-1) a sulfonium salt represented by 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophenium perfluoro-n-octanesulfonate and 1-(4-n-butoxy-1-naphthyl)tetrahydrothiophenium nonafluoro-n-butanesulfonate and (B-2) a sulfonium salt represented by triphenylsulfonium nonafluoro-n-butanesulfonate. The radiation-sensitive resin composition useful as a novel chemically amplified resist exhibiting excellent sensitivity and resolution to deep ultraviolet rays typified by an ArF excimer laser, superior pattern shape-forming capability, and the like.

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Tokyo, Japan

Motoyuki Shima