Mitsubishi Electric Corporation

Motoyoshi Koyanagi

Koji Yamanaka

Hiroshi Otsuka

Tetsuo Kunii

Akira Ota

Tetsuhiro Fukao

Shohei Imai

Hiroaki Maehara

Yohei Mikami

Tomohito Taniuchi

Masafumi Takeda

Tetsuya Kitagawa

Daisuke Ikeda

Seiichi Tsuji

Yuji Kobayashi

Kazuhiro Sasano

Masayuki Kubota

Kazuya Itose

An electronic device inspection apparatus of the present application comprises an inspection table for positioning and holding an electrode disposed on a semiconductor device, a contact element that is formed of a shape memory alloy in a long and thin plate shape and has a base part fixed to the inspection table and a variable part formed in a shape of a spiral at a first temperature and being developed from the spiral at a second temperature; and a measurement circuitry for measuring the semiconductor device by conducting a current to flow into the electrode via the contact element. The axis of the spiral of the variable part is parallel to the electrode face of the positioned electrode and a contact region is formed along a longitudinal direction between the variable part and the positioned electrode at the second temperature.

Electronic device inspection apparatus

A semiconductor inspection jig includes: a base on which a semiconductor device is placed; and a substrate provided on the base and including a conductive pattern, wherein the conductive pattern intersects with a lead of the semiconductor device placed on the base from a direction other than a horizontal direction with respect to the lead, and is in contact with an intermediate part of the lead without being in contact with a leading end of the lead.

Semiconductor inspection jig

A configuration is provided with: a tuned linethat is connected between a branch terminaland a branch terminal of branch linesand; and a tuned linethat is connected between a combining terminaland a combining terminalof combining linesand. This enables reduction of a non-uniform voltage distribution occurring due to a difference in characteristics between two amplifier elementsand

High-frequency power amplifier

A semiconductor device includes: a package; an input matching circuit and an output matching circuit in the package; and transistor chips between the input matching circuit and the output matching circuit in the package. Each transistor chip includes a semiconductor substrate having long sides and short sides that are shorter than the long sides, and a gate electrode, a drain electrode and a source electrode on the semiconductor substrate. The gate electrode has gate fingers arranged along the long sides of the semiconductor substrate and a gate pad commonly connected to the gate fingers and connected to the input matching circuit via a first wire. The drain electrode is connected to the output matching circuit via a second wire. The long sides of the semiconductor substrates of the transistor chips are oblique with respect to an input/output direction extending from the input matching circuit to the output matching circuit.

Semiconductor device including transistor chips having oblique gate electrode fingers

Growing community of inventors

Tokyo, Japan

Motoyoshi Koyanagi