Ulvac, Inc.

Motoshi Kobayashi

Junya Kiyota

Masaki Takei

Yasuhiko Akamatsu

Kyuzo Nakamura

Satoru Ishibashi

Masaru Wada

Kazutoshi Takahashi

Makoto Arai

Junichi Nitta

Yuu Kawagoe

Kentarou Takesue

Yuuichi Oishi

Ryouta Nakamura

Tomohiro Nagata

Mitsuru Ueno

Taku Hanna

Yuusuke Ujihara

Yasuo Nakadai

Jungo Onoda

Koji Hidaka

Tomiyuki Yukawa

[Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film. [Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

Aluminum alloy film, method of producing the same, and thin film transistor

[Solving Means] An oxide semiconductor thin film according to an embodiment of the present invention includes: an oxide semiconductor that mainly contains In, Sn, and Ge. An atom ratio of Ge/(In+Sn+Ge) is 0.07 or more and 0.40 or less. As a result, it is possible to achieve transistor characteristics with a mobility of 10 cm/Vs or more.

Oxide semiconductor thin film, thin film transistor, method producing the same, and sputtering target

A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.

Thin-film transistor, oxide semiconductor film, and sputtering target

The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.

Magnetron sputtering apparatus and magnetron sputtering method

Growing community of inventors

Chigasaki, Japan

Motoshi Kobayashi