Mitsubishi Electric Corporation

Motoshi Kitagawa

Takahiro Ueno

Naohisa Tamada

Masafumi Minami

Kazumasa Kishimoto

A laminate () is formed on a semiconductor substrate (). Two or more grooves () are formed in the laminate (). A mesa () with two grooves among the two or more grooves () positioned on both sides is formed. An insulating resin film () is embedded into the two or more grooves (). A first opening () is formed at the insulating resin film () embedded in one of the two or more grooves () and an electrode () extracted upward from a bottom surface () is formed. A first side surface () of the insulating resin film () is inclined in a forward tapered direction.

Semiconductor device and method for manufacturing semiconductor device

A method of manufacturing a semiconductor device according to the present invention includes a step of forming an opening portion in a resist coated on a substrate, a step of coating a thermally-shrinking shrink agent on the resist to fill the opening portion with the shrink agent, a shrinking step of heating and thermally shrinking the shrink agent to reduce a width of the opening portion, a removing step of removing the shrink agent after the shrinking step, a step of forming a metal layer on the resist and in the opening portion after the removing step and a step of removing a portion of the metal layer above the resist and the resist, wherein in the shrinking step, a side surface of the resist forming the opening portion forms a curved surface protruding toward a center portion of the opening portion.

Method of manufacturing semiconductor device

A method for manufacturing a semiconductor laser of the present invention includes a step of forming an insulating film on a surface of a grooved semiconductor substrate, a step of pasting an insulating sheet to a top surface of the insulating film so as to cover an opening of the groove and forming an insulating layer on the semiconductor substrate, a step of forming an opening of providing a first opening in the insulating layer so that a part corresponding to an electrode of the semiconductor substrate is exposed and a step of forming the electrode on a top surface of the insulating layer so as to fill the first opening.

Growing community of inventors

Tokyo, Japan

Motoshi Kitagawa