Fujitsu Corporation

Motonobu Sato

Daiyu Kondo

Shintaro Sato

Mizuhisa Nihei

Naoki Yokoyama

Satoshi Otsuka

Toyoji Sawada

Masayuki Nakada

Hiroshi Nakadai

A carbon conductive structure includes: first graphenes of a graphene plug which are stacked in a plurality of layers along a vertical direction; and second graphenes of a graphene wiring line which are stacked in a plurality of layers along the vertical direction, wherein edge portions of the first graphenes and edge portions of the second graphenes are electrically connected to each other.

Carbon conductive structure and method of manufacturing the same

A trench is formed in an insulating film, carbon is formed on the insulating film to fill an inside of the trench, a catalytic material is formed on the carbon, heat treatment is performed on the carbon to turn the carbon into graphenes which are stacked in a plurality of layers, and the catalytic material and a part of the graphenes on the insulating film are removed to make the graphenes remain only in the trench.

Manufacturing method of wiring structure and wiring structure

An opening is formed in an insulating film being a formation site, vertical and parallel CNTs are formed, tip portions of the CNTs are inserted into the opening, and the CNTs are removed except for the tip portions inserted into the opening. With this configuration, a desired conductive structure with high reliability is realized by forming high-quality CNTs in an opening of a formation site without depending on a base material.

Conductive structure and manufacturing method thereof, and electronic device and manufacturing method thereof

A semiconductor device includes: a silicon substrate that includes a heat release mechanism formed on a rear surface thereof; and an element layer that includes a transistor element and is formed on a front surface of the silicon substrate, the heat release mechanism including: a carbon material being a high heat-conducting material such as a CNT that is higher in heat conductivity than the silicon substrate and is formed in a plurality of first holes formed in the rear surface of the silicon substrate; and a carbon material being a heat-conductive film such as a multilayer graphene film that is thermally connected to the CNT in a manner to cover a rear surface side of the silicon substrate. This configuration provides a carbon material-embedded silicon substrate realizing very efficient heat release with a relatively simple configuration to obtain a highly-reliable electronic device.

Electronic device and method for manufacturing the same, and substrate structure and method for manufacturing the same

A compound semiconductor device includes: a substrate; a channel layer over the substrate; a carrier supply layer over the channel layer; a gate electrode, a source electrode and a drain electrode above the channel layer and the carrier supply layer; and an insulating film that covers the carrier supply layer between the source electrode and the drain electrode. The insulating film includes: a first region that contains anion under the gate electrode; and a second region on the source electrode side or on the drain electrode side of the first region, an anion concentration in the second region being lower than an anion concentration in the first region.

Compound semiconductor device and method of manufacturing the same

A wiring structure is made up by electrically connecting a via part made up by forming CNTs in a via hole and a wiring part made up of multilayer graphene on an interlayer insulating film via a metal block such as Cu. In the wiring structure using the CNTs at the via part and the graphene at the wiring part, it is thereby possible to obtain the wiring structure with high reliability enabling a certain electrical connection between the CNTs and the graphene with a relatively simple configuration.

Wiring structure and method of manufacturing the same

In manufacturing an electronic device in which a semiconductor chip including an element layer formed on a front surface of a substrate and a heat sink to perform heat radiation of the semiconductor chip are connected via a heat spreader, a first heat spreader is formed on a rear surface of the semiconductor chip using a first carbon nanotube, a second heat spreader is formed on the heat sink using a second carbon nanotube, and the first heat spreader and the second heat spreader are caused to adhere to each other. With this configuration, a highly reliable electronic device that has very low heat resistance and achieves efficient heat radiation with a relatively simple configuration is fabricated.

Electronic device and method of manufacturing the same

A method manufactures a semiconductor device which allows nanocarbon materials, such as high-quality graphene and carbon nanotube to be used. The method of manufacturing the semiconductor device comprises forming on a substrate a wiring structure including wires of nanocarbon material; forming on the wiring structure an element structure including a semiconductor element; and interconnecting the wires of the wiring structure and the semiconductor element of the element structure.

Semiconductor manufacturing method and semiconductor device

A redundant fuse is provided with a redundant length, here a winding structure, at one end thereof, here at a vicinity of a second wire side to which a high voltage (Vcc) is impressed. A disconnected portion is provided between the other end side of the redundant fuse, here a second wire side which is on the ground potential (GND) and the winding structure.

Growing community of inventors

Isehara, Japan

Motonobu Sato