Fujitsu Corporation

Motonobu Kawarada

Kazuaki Kurihara

Kenichi Sasaki

Nagaaki Koshino

Akitomo Teshima

Ken-ichi Sasaki

Tsukasa Itani

Hideyuki Motoyama

Goro Watanabe

A keyboard including a housing unit for slidably supporting a key top; and a support panel unit carrying a switch to be operated by the key top. The housing unit can move between a first position apart from the support panel unit and a second position close to the the support panel unit, and the first position is such that the key top vertically shifting from but confronting the switch, when pressed, can operate the switch, and the second position is such that the key top being horizontally deviated from the switch, even if pressed, cannot operate the switch. The housing panel may support the elastic member for supporting the key top upon a main surface thereof, a first horizontal end of the elastic member may be fixed to the housing panel, and a second horizontal end opposite the first end of the elastic member may be movable in the horizontal direction. A switch is vertically pushed by the key top; and a support panel may hold the switch thereon, and may support the second horizontal end of the elastic member. The support panel may slide horizontally to push the second horizontal end so that the elastic member may be elastically deformed for respective center lines of the key top and the switch to substantially align each other.

Keyboard and an information processing apparatus

A process for gas phase synthesis of diamond using a DC plasma jet where a plasma jet generated by DC arc discharge using a DC plasma torch is made to strike a substrate and grow diamond on the substrate, wherein use is made of a plurality of plasma torch anodes, these are arranged coaxially in a telescoped structure, a magnetic field is applied to these in accordance with need to cause the arc to rotate or the electrode is rotated so as to perform gas phase synthesis of diamond.

Method for producing diamond by a DC plasma jet

A process for producing diamond includes a step of bringing a columnar cathode and a tubular pilot anode provided concentrically around the cathode, into proximity to a plasma jetting port of a front end portion of a tubular main anode provided concentrically around the pilot anode. According to the process, a voltage is applied across the cathode and the pilot anode to convert a pilot gas to the form of a plasma. Then, the cathode is moved away from the pilot anode along a common axis. The process also includes the step of holding the discharge voltage between the cathode and the pilot anode at a first preselected voltage, and then applying voltage across the cathode and the main anode to convert a main gas to the form of a plasma. Subsequently, at least the pilot anode is moved away from the main anode along the common axis while maintaining the discharge voltage between the cathode and the pilot anode at the first preselected voltage. The process further includes the steps of holding the discharge voltage between the cathode and the main anode at a second preselected voltage and jetting the main gas in the form of plasma from the jetting port while generating a main arc between the main anode and the cathode.

DC plasma jet CVD method for producing diamond

A diamond film is formed on a surface of a substrate. The diamond film is attached securely to the substrate by forming a first layer on the surface comprising a mixture of a main component of the substrate and a sintering reinforcement agent for diamond, then forming a second layer comprising a mixture of said agent and diamond on said first layer, and finally forming the diamond film on the second layer.

Method and apparatus for vapor deposition of diamond film

An apparatus for a vapor deposition of diamond by:

Method and apparatus for vapor deposition of diamond

An apparatus for depositing a diamond film on a substrate includes a first electrode formed as an enclosed body having a nozzle for jetting thermal plasma opening therefrom and a second electrode of opposite polarity positioned in the nozzle. The apparatus additionally includes a power source for applying a direct current voltage between the electrodes. A gas is fed between the electrodes as a direct current voltage is applied thereto, whereby the gas is formed into a thermal plasma which is jetted through the nozzle. A starting gas feed system is included for feeding gaseous starting compounds for vapor phase deposition to the plasma jet and a powder supplying pipe is provided for feeding a metal powder between the electrodes.

Plasma jet CVD apparatus for forming diamond films

A method for vapor deposition of diamond by effecting an arc discharge while feeding a discharge gas between an anode and a cathode of a thermal plasma chemical vapor deposition device, radicalizing a gaseous carbon compound by feeding the gaseous carbon compound into a generated plasma jet, and permitting the radicalized plasma jet to impinge on a substrate to be treated, whereby a film of diamond is formed on the substrate.

Method for arc discharge plasma vapor deposition of diamond

A process and apparatus for producing a diamond film from a gas phase, in which a fuel gas is burnt by oxygen gas in a torch, to thereby provide a gas flame jet having a high temperature and high speed sufficient to form a high quality diamond film on a substrate, by an unlimited use of various kinds of combustible carbon compound gases as the fuel gas. A process and apparatus for producing a diamond film from a gas phase, in which a thermal spray material is fed to a combustion flame to thereby form an intermediate layer of a mixture of the thermal spray material and diamond between a substrate and a diamond film, to thereby provide a high purity diamond film having an improved adhesion to the substrate.

Process and apparatus for producing diamond film

A process for forming a diamond gas phase synthesized coating film which is easily controlled and affords a high quality, good adhesion strength diamond film includes a step of forming a mixed layer of a plasma spraying material and diamond by simultaneously conducting plasma injection by a plasma spraying, a first torch and plasma CVD by a CVD plasma, second torch to thereby form a mixed layer on the substrate. The first and second torches are structurally distinct and have respective, separately and selectively controlled plasma generation operating conditions.

Process for forming a mixed layer of a plasma sprayed material and

A diamond film is deposited on a surface of a substrate. The diamond film is attached securely to the substrate by forming a first layer on the surface comprising a mixture of a main component of the substrate and a sintering reinforcement agent for diamond, then forming a second layer comprising a mixture of said agent and diamond on said first layer, and finally forming the diamond film on the second layer.

Growing community of inventors

Sagamihara, Japan

Motonobu Kawarada