Mitsubishi Electric Corporation

Motonobu Joko

Rei Yoneyama

Hiroshi Yoshida

Manabu Matsumoto

Fumitaka Tametani

Haruhiko Takemoto

The present invention relates to a semiconductor device and it is an object of the present invention to provide a semiconductor device that makes it easy to change a specification on driving of a power semiconductor element or control of a protection operation thereof. The semiconductor device includes a power semiconductor element, a main electrode terminal of the power semiconductor element, a sensor section that emits a signal corresponding to a physical state of the power semiconductor element, a sensor signal terminal connected to the sensor section, a drive terminal that supplies power to drive the power semiconductor element and a case that accommodates the power semiconductor element, the main electrode terminal, the sensor section, the sensor signal terminal and the drive terminal, and the sensor signal terminal and the drive terminal are provided so as to be connectable from outside the case.

Semiconductor device, intelligent power module and power conversion apparatus

A semiconductor device comprises a power device, a sensor which measures a physical state of the power device to transmit a signal according to the physical state, and a main electrode terminal through which a main current of the power device flows. The semiconductor device further comprises a sensor signal terminal connected to the sensor for receiving a signal from the sensor, a driving terminal which receives driving power for driving the power device, and an open bottomed case which houses the power device, the sensor, the main electrode terminal, the sensor signal terminal and the driving terminal. The first and second terminals electrically conduct with each other to form a double structure. Also, the sensor signal terminal and the driving terminal each have a first terminal and a second terminal which are not embedded within the case.

Semiconductor device including sensor and driving terminals spaced away from the semiconductor device case wall

A fuse, a resistor, and a transistor, which serve as an abnormality history setting unit, are provided in series between external terminals. The transistor receives a specific abnormality detection signal on its base from an abnormality detection circuit. The specific abnormality detection signal becomes 'H' level in order to bring the transistor into an on state when a specific abnormal phenomenon to be detected occurs out of plural types of abnormal phenomena. The abnormality history setting unit executes an abnormality history operation for turning on the transistor and allowing a current exceeding a disconnection level to flow through the fuse provided between the external terminals to disconnect the fuse.

Growing community of inventors

Tokyo, Japan

Motonobu Joko