Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Wi-Lan Inc.

Motonari Katsuno

Ryohei Miyagawa

Hirohisa Ohtsuki

Tetsuya Nakamura

Masayuki Takase

Ryouhei Miyagawa

Masayuki Matsunaga

Kazuhiro Yamashita

Hiroyuki Doi

Mikiya Uchida

Kosaku Saeki

Gen Okazaki

Tatsuya Hirata

Masao Kataoka

Hisashi Yano

Akira Oodaira

Shigeru Suzuki

In a pixel unit of a solid-state imaging device, a semiconductor substrate is provided with a plurality of photodiodes, a first insulating film includes a recess in a portion above each of the photodiodes, a second insulating film embeds the recess, a plurality of color filters is formed on the second insulating film, the color filters each corresponding to one of the photodiodes, a partition is provided between adjacent ones of the color filters, the partition being a part of a third insulating film, and in an area outside of the pixel unit, (i) a conductive film at least partially covered by the third insulating film is formed on the second insulating film, and (ii) the third insulating film formed on the conductive film and on the second insulating film near the conductive film has a film thickness smaller than a film thickness of the partition.

Solid-state imaging device and method for manufacturing the same

Capacitance between a detection capacitor and a reset transistor is the largest among the capacitances between the detection capacitor and transistors placed around the detection capacitor. In order to reduce this capacitance, it is effective to reduce the channel width of the reset transistor. It is possible to reduce the effective channel width by distributing, in the vicinity of the channel of the reset transistor and the boundary line between an active region and an element isolation region, ions which enhance the generation of carriers of an opposite polarity to the channel.

Solid-state imaging device

A solid-state imaging device includes a semiconductor substrate having a plurality of light-receiving portions (PD) formed therein, a wiring layer formed on the semiconductor substrate, color filters formed on the wiring layer in a manner individually corresponding to the light-receiving portions (PD) of the semiconductor substrate, and partition walls each formed between the individual color filters. Each of the partition walls includes a lower layer portion and an upper layer portion, an upper surface of the lower layer portion is modified into a modified layer, and an interface for facilitating reflection of penetration light from outside is structured between the modified layer and the upper layer portion.

A solid-state imaging device and a method for manufacturing the same are provided. The solid-state imaging device includes a structure that provides a high sensitivity and high resolution without variations in spectral sensitivity and without halation of colors, and prevents light from penetrating into an adjacent pixel portion. A plurality of photodiodes are formed inside a semiconductor substrate. A wiring layer includes a laminated structure of an insulating film and a wire and is formed on the semiconductor substrate. A plurality of color filters are formed individually in a manner corresponding to the plurality of photodiodes above the wiring layer. A planarized film and a microlens are sequentially laminated on each of the color filters. In the solid-state imaging device, each of the color filters has an refraction index higher than that of the planarized film and has, in a Z-axis direction, an upper surface in a concave shape.

There is employed a lamination structure of semiconductor substrate in which light receiving part having a photoelectric converting function is formed in an inner portion, and insulating films and wirings. There are provided a wiring layer formed above semiconductor substrate and having a concave portion formed in a place corresponding to a portion disposed above light receiving part, second insulating film having a higher refractive index than insulating films and covering a side surface of the wiring layer facing the concave portion, third insulating film having a lower refractive index than second insulating film and covering the side surface of second insulating film, and fourth insulating film having a higher refractive index than third insulating film and covering the side surface of third insulating film.

A solid-state imaging device according to an implementation of the present invention is a solid-state imaging device including a plurality of unit pixels arranged in a matrix, and each of the unit pixels includes a photodiode which performs photoelectric conversion on light so as to convert the light into an electric signal, a top lens which collects incident light, and an intralayer lens which collects, to the photodiode, the incident light collected by the top lens, and a centroid of the photodiode is displaced from a center of the unit pixel into a first direction, the top lens is formed into an asymmetric shape so as to have a centroid displaced from the center of the unit pixel into the first direction, and the intralayer lens is formed to have a centroid displaced from the center of the unit pixel into the first direction.

Solid-state imaging device and method of manufacturing the same

Solid-state imaging device comprising doped channel stop at isolation regions to suppress noise

A solid state imaging device including a pixel region where a plurality of pixel cells--. . . have been formed. When focusing on a red pixel cell whose color filter has the longer transmission peak wavelength and a blue pixel cell whose color filter has the shorter transmission peak wavelength, the distribution of substrate contacts is denser in a region in the vicinity of a photodiode in the red pixel cell than a region in the vicinity of a photodiode in the blue pixel cell.

Solid state imaging device including a semiconductor substrate on which a plurality of pixel cells have been formed

A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount sfrom the peripheral portion toward the central portion. The shift amount sis greater than the shift amount r.

Provided is a solid-state imaging device including unit pixels, wherein the unit pixels include two kinds of unit pixels including a first unit pixel and a second unit pixel that are formed on a common well on a semiconductor substrate. The first unit pixel includes: at least one photoelectric conversion region which converts light into a signal charge; the first semiconductor region that is formed on the common well and has a conductivity type identical to that of the common well; and the first contact electrically connected to the first semiconductor region. The second unit pixel includes: at least one photoelectric conversion region; the second semiconductor region that is formed on the common well and has a conductivity type opposite to that of the common well; and the second contact electrically connected to the second semiconductor region.

Solid-state imaging device and camera having the same

In a solid-state image pickup device, it is difficult to match an optimum incidence angle corresponding to an image height of a pixel array region with light incidence characteristics of a camera lens, thereby causing image quality deterioration due to sensitivity shading. Respective microlenses are disposed in a two-dimensional manner, i.e., in a row and a column directions. In particular, the microlenses are disposed such that each side of a disposition region where the microlenses are disposed has a concave curve with respect to a line connecting adjacent vertexes of the disposition region. In other words, a distance A(A) between center points of a pair of facing sides of the disposition region is set to be smaller than a distance B(B) between neighboring vertexes of the disposition region.

Solid-state image pickup device

In a MOS-type solid-state imaging devicein pixelstoin which lines in an upper layer (charge transfer linesto) are formed in shifted positions located toward a center Lof an image area, each two oppositely disposed pixels with the center Lof the image area sandwiched therebetween, such as a pixeland a pixelhave the following relation. In each of the pixelsandpower supply linesandvertical signal linesandand charge transfer linesandrelating to each of the pixelsandare arranged symmetrically with respect to an imaginary plane extending from the center Lof a sensorin a direction orthogonal to the drawing page in an X-axis direction.

Solid-state imaging device having a plurality of lines formed in at least two layers on semiconductor substrate

A solid-state imaging device of the present invention includes: a semiconductor substrate including a first region of a first conductivity type; a signal accumulation region of a second conductivity type formed within the first region; a gate electrode formed above the first region; a drain region of a second conductivity type formed on the first region; an isolation region having insulation properties, which is formed to surround a region where the signal accumulation region, the gate electrode, and the drain region are formed; a first conductivity type dopant doping region formed in contact with a side face and a bottom face of the isolation region, the first conductivity type dopant doping region having a higher dopant concentration than the first region; and a second conductivity type dopant doping region formed in the first region, under an end of the gate electrode in a gate width direction.

Solid-state imaging device and manufacturing method of the same

A pixel array is provided in which cells are arranged in a matrix. Each cell includes a photodiode, an FD, a transfer transistor, a reset transistor, an amplifying transistor having a gate electrode connected to the FD, a drain connected to a power supply line, and a source connected to a vertical signal line, and an FD wire. The FD wire is provided in a first wiring line, and the vertical signal line is provided in a second wiring line positioned over the first wiring layer. Since the potential of the FD wire follows the potential of the vertical signal line, it is possible to suppress a variation in capacitance occurring in the FD when a position of the vertical signal is shifted, depending on a position of the cell.

Solid-state imaging device and method for driving the same

A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.

Growing community of inventors

Kyoto, Japan

Motonari Katsuno