Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Motonari Honda

Jun Sumino

Takeshi Matsunuma

Katsuhisa Aratani

Koji Miyata

Kazuhiro Ohba

Atsumi Niwa

Tetsuya Mizuguchi

Akihiro Maesaka

Ryoji Suzuki

Shun Kaizu

Kei Nakagawa

Motoaki Nakamura

An imaging apparatus according to an embodiment of the disclosure includes: an event detection device that outputs an event signal corresponding to a temporal change of a first pixel signal, the first pixel signal being obtained by imaging; and an expression detector that detects an expression on a basis of the event signal to be outputted from the event detection device.

Imaging apparatus and method of detecting expression

Time deviation between event detection and gradation acquisition is reduced. A solid-state imaging apparatus according to an embodiment includes: a pixel array unit () including a plurality of pixel blocks () arrayed in a matrix; and a drive circuit () that generates a pixel signal in a first pixel block in which firing of an address event has been detected among the plurality of pixel blocks, each of the plurality of pixel blocks including a first photoelectric conversion element () that generates an electric charge according to an amount of incident light, a detection unit () that detects the firing of the address event based on the electric charge generated in the first photoelectric conversion element, a second photoelectric conversion element () that generates an electric charge according to an amount of incident light, and a pixel circuit () that generates a pixel signal based on the electric charge generated in the second photoelectric conversion element.

Solid-state imaging apparatus and imaging apparatus

The present technology relates to image data processing devices, image data processing methods, and programs. A frame data generation unit generates first frame data based on event data indicating a variation in an electrical signal of a pixel generating the electrical signal by performing photoelectric conversion during a first accumulation time from a first frame generation start time to a first frame generation end time, and second frame data based on event data occurring during a second accumulation time from a second frame generation start time to a second frame generation end time. A first frame period from the first frame generation start time to the second frame generation start time is set and supplied to the frame data generation unit. The present technology can be applied to, for example, a case where a frame data is generated from an event data output from a dynamic vision sensor (DVS).

Data processing device, data processing method, and program

In an imaging element including a polarizer, accuracy of obtained polarization information is improved. The imaging element includes a polarizer and a photoelectric conversion element, from the incident light side. A plurality of types of polarizing members is arranged on the polarizer. The plurality of types of polarizing members is polarizing members having the same internal structures, and is formed as the plurality of types of polarizing members by rotationally moving or symmetrically moving one of the polarizing members. The photoelectric conversion element converts light incident through each of the plurality of types of polarizing members into electric charges.

Imaging element and imaging device for improving accuracy of polarization information

An imaging device capable of further increasing the accuracy of distance information and an electronic apparatus equipped with the imaging device are provided. The present technology provides an imaging device that includes a stereo imager, and the stereo imager includes a plurality of sensors. Each sensor of the plurality of sensors has an imaging unit formed with a plurality of repeating units. The imaging unit includes a polarizer having at least one kind of polarization spindle angle, and at least two unit images obtained by a plurality of the imaging units are combined, to obtain information about polarization in at least three directions, and generate normal information. The present technology further provides an electronic apparatus equipped with the imaging device.

Imaging device and electronic apparatus

In an imaging element, a plurality of pixels each having a photoelectric conversion part is arranged in a two-dimensional matrix. Some of the plurality of pixels each have a polarizer placed therein on a side of a light beam incidence plane. At least some of pixels having no polarizer placed therein each have a material layer placed therein that prevents transmission of a light beam having a wavelength of a predetermined range, to reduce color mixture in the pixel having the polarizer placed therein.

Imaging element and electronic device including imaging device

The present technology relates to an imaging device designed to be able to reduce luminance unevenness. An imaging device includes a photodiode and a wiring layer formed on a surface facing the incident surface of the photodiode. A wiring line is formed in the wiring layer, and the wiring line in a pixel is formed in a different pattern from a pattern in a different pixel. Another imaging device including a photodiode and a wiring layer formed on a surface facing the incident surface of the photodiode. A wiring line is formed in the wiring layer. A gap having a different dielectric constant from the dielectric constant of the material forming the wiring layer is formed in the wiring layer, and the gap in a pixel is formed in a different pattern from a pattern in a different pixel. The present technology can be applied to imaging devices.

Imaging device for reducing luminace unevenness

The present technology relates to a solid-state image capturing device and an electronic device which are capable of improving detection accuracy for polarization information and color information. The solid-state image capturing device includes a pixel array unit including a plurality of polarizing pixels configured to detect polarization information, and a plurality of color pixels configured to detect color information. The polarizing pixels are arranged in a row direction and a column direction in a grid form. The color pixels are arranged in the row direction and the column direction in the grid form between the polarizing pixels that are adjacent, at positions shifted from the polarizing pixels in the row direction and the column direction. For example, the present technology can be applied to the solid-state image capturing device.

Solid-state image capturing device and electronic device

A nonvolatile memory device group includes: (A) a first insulating layer; (B) a second insulating layer that has a first concavity and a second concavity communicating with the first concavity and having a width larger than that of the first concavity and that is disposed on the first insulating layer; (C) a plurality of electrodes that are disposed in the first insulating layer and the top surface of which is exposed from the bottom surface of the first concavity; (D) an information storage layer that is formed on the side walls and the bottom surfaces of the first concavity and the second concavity; and (E) a conductive material layer that is filled in a space surrounded with the information storage layer in the second concavity.

Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof

The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The memory element includes a first electrode, a memory layer, and a second electrode in order. The memory layer has: an ion source layer containing at least one of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and at least one metal element selected from copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr); and two or more high-resistance layers having a resistance value higher than that of the ion source layer and having different compositions.

Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same

A memory unit includes memory elements and a drive section. In executing a first operation out of the first operation for changing resistance state of the memory element from one resistance state out of low resistance state and high resistance state to the other resistance state and a second operation for changing the resistance state of the memory element from the other resistance state to the one resistance state, the drive section performs stepwise operation, in which the drive section repeatedly performs, at least one time, a step in which strong stress application step for applying a stress for performing the first operation to the memory element as the drive target relatively strongly is performed and subsequently weak stress application step for applying a stress for performing the second operation to the memory element as the drive target relatively weakly is performed, and subsequently performs the strong stress application step.

Growing community of inventors

Kanagawa, Japan

Motonari Honda