Canon Anelva Corporation

Motomu Kosuda

Naomu Kitano

Naoki Yamada

Heiji Watanabe

Nobuo Yamaguchi

Takashi Minami

Takashi Nakagawa

Toru Tatsumi

Koji Tsunekawa

Naoki Watanabe

Kazuaki Matsuo

Takaaki Tsunoda

Wickramanayaka Sunil

Disclosed is a sputtering apparatus having a target () disposed offset with respect to a substrate (), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder () has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less. A control unit () is provided to control a rotational velocity V (rps) of the substrate support holder () to satisfy:by inputting the value of a deposition time T and the values of a total whole number of rotations N and a fractional number of rotations &#x3b1; which are expressed as:X=N+&#x3b1;

Sputtering apparatus and recording medium for recording control program thereof

This invention provides a semiconductor device having a field effect transistor comprising a gate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function. In the semiconductor device, a gate insulating filmon a silicon substratehas a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, the gate electrode has a first metal nitride layerprovided on the gate insulating filmand containing Ti and N, a second metal nitride layercontaining Ti and N, and a polycrystalline silicon layer, in the first metal nitride layer, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X1 is 1.1&#x3c;X1 &#x3c;1.8, and in the second metal nitride layer, the molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X2 is 1.8&#x2266;X2.

Semiconductor device and method of manufacturing the same

A first aspect of the present invention provides a semiconductor manufacturing apparatus including: a load lock chamber; a transfer chamber; and a treatment chamberand a treatment chamberwhich carry out treatment using plasma, wherein, in the treatment chamber, an exhaust means is provided with a control means for making an oxygen partial pressure into 1*10[Pa] or less. A second aspect of the present invention provides a method for forming a high dielectric constant film and a metal electrode successively, the method including the steps of: (1) depositing a metal film on a silicon oxide film or a silicon oxynitride film in the treatment chamber; (2) forming, in the treatment chamber, a high dielectric constant film by using the metal film formed in the treatment chamber; and (3) depositing, in the treatment chamberor a treatment chamberinstalled additionally, a metal electrode material on the high dielectric film formed in the treatment chamber, wherein the steps are carried out successively without being exposed to the atmosphere.

Semiconductor manufacturing apparatus and method

The object of the present invention is to provide a method of manufacturing high permittivity gate dielectrics for a device such as an MOSFET. A HfSiO film is formed by sputtering a Hf metal film on a SiOfilm (or a SiON film) on a Si wafer. A TiOfilm is formed by sputtering a Ti metal film on the HfSiO film and subjecting the Ti metal film to a thermal oxidation treatment. A TiN metal film is deposited on the TiOfilm. The series of treatments are performed continuously, without exposing the films and the wafer to atmospheric air. The resultant TiN/TiO/HfSiO/SiO/Si structure satisfies the conditions: EOT&#x3c;1.0 nm, low leakage current, and hysteresis &#x3c;20 mV.

Semiconductor element and manufacturing method thereof

A sputtering film forming method. which positions a targetandat an incline to a surface of a substratewhereupon a film is to be formed, and forms the film upon the surface of the substratewhereupon the film is to be formed in an incline direction while the substrateis rotated about a normal axis, terminates the forming of the film at a predetermined timing from the commencement of the forming of the film, wherein the forming of the film is terminated, when the substrate has rotated by 360 degrees&#xd7;n+180 degrees+&#x3b1;, where n is a natural number, including 0, and &#x2212;10 degrees&#x3c;&#x3b1;&#x3c;10 degrees.

Sputtering film forming method, electronic device manufacturing method, and sputtering system

A method to improve a high-k dielectric film and metal gate interface in the fabrication of a MOSFET by depositing a metal gate on a high-k dielectric, the method includes annealing a substrate with a high-k dielectric film deposited thereon in a thermal annealing module and depositing a metal gate material on the annealed substrate in a metal gate deposition module, wherein the annealing step and the depositing step are carried out consecutively without a vacuum break.

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Machida, Japan

Motomu Kosuda