Kokusai Electric Corporation

Hitachi-Kokusai Electric Inc.

Motomu Degai

Kimihiko Nakatani

Takashi Nakagawa

Takayuki Waseda

Yoshitomo Hashimoto

Hiroshi Ashihara

Kazuhiro Harada

Yoshiro Hirose

Arito Ogawa

Masahito Kitamura

Shoma Miyata

Ryota Ueno

Takao Izaki

Kenji Kameda

Masanori Nakayama

Yukinao Kaga

There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle, the cycle including: (a) forming a layer on a surface of the base by exposing the base to a modifying agent; and (b) causing a reaction between a halogen-containing radical and the base by exposing the layer to a halogen-containing gas such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.

Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium

There is provided a technique that includes: etching a first film exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first modified layer in at least a portion of a surface of the first film by supplying a first gas to the substrate; and (b) etching at least a portion of the first film with an etching species, the etching species being generated by supplying a second gas having a molecular structure different from that of the first gas to the substrate to perform at least one selected from the group of causing the second gas to react with the first modified layer and activating the first modified layer with the second gas.

Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.

Described herein is a technique capable of selectively forming a thin film on a substrate while suppressing damage to other films of the substrate. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) removing a natural oxide film from a surface of a substrate by supplying a first inorganic material to the substrate wherein a first film and a second film different from the first film are exposed on the surface of the substrate; (b) forming an oxide film by oxidizing a surface of the first film by supplying an oxidizing agent to the substrate; (c) modifying the surface of the first film by supplying a second inorganic material to the substrate; and (d) selectively growing a thin film on a surface of the second film by supplying a deposition gas to the substrate, wherein (a) through (d) are sequentially performed.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

A technique includes: (a) providing a substrate having a first surface and a second surface; (b) modifying the first surface to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate; and (c) forming a film on the second surface by supplying a precursor and an oxygen- and hydrogen-containing gas to the substrate after modifying the first surface.

Method of processing substrate and method of manufacturing semiconductor device by forming film

There is provided a technique that includes: organically terminating a first region of a substrate by supplying an adsorption control agent containing an organic ligand to the substrate while regulating a temperature of the substrate including the first region and a second region different from the first region formed on a surface of the substrate depending on a composition of the first region; and selectively growing a film on the second region by supplying a deposition gas to the substrate.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is method of processing a substrate comprising: (a) providing the substrate with a first base containing no oxygen, a second base containing oxygen, and a third base containing no oxygen and no nitrogen on its surface, wherein a protective film is formed on a surface of the third base; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate in a state where the protective film is formed on the surface of the third base; and (c) forming a film on a surface of the first base by supplying a film-forming gas to the substrate in a state where the surface of the second base is modified.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of substrate by supplying modifying gas to the substrate including the first base and a second base exposed on the surface of the substrate; (b) selectively forming a first film on a surface of the second base by supplying first film-forming gas to the substrate after performing (a); (c) etching the first film formed on the surface of the first base to expose the surface of the first base and remodifying the surface of the first base by supplying first fluorine-containing gas to the substrate after the first film is formed on the surface of the first base after performing (b); and (d) selectively forming a second film on the first film formed on the surface of the second base by supplying second film-forming gas to the substrate after performing (c).

There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming a layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the layer such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.

A technique includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Methods of processing substrate and manufacturing semiconductor device by forming film, substrate processing apparatus, and recording medium

There is provided a technique that includes filling a concave portion formed on a surface of a substrate with a first film and a second film by performing: (a) forming the first film having a hollow portion using a first precursor so as to fill the concave portion formed on the surface of the substrate; (b) etching a portion of the first film which makes contact with the hollow portion, using an etching agent; and (c) forming the second film on the first film of which the portion is etched, using a second precursor, wherein (b) includes performing, a predetermined number of times: (b-1) modifying a portion of the first film using a modifying agent; and (b-2) selectively etching the modified portion of the first film using the etching agent.

Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

There is provided a technique that includes selectively doping a metal film with a dopant by performing: supplying a dopant-containing gas containing the dopant to a substrate in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped; and removing the dopant-containing gas from above the substrate.

There is included (a) forming a protective film on a surface of a third base by supplying a processing gas to a substrate in which a first base containing no oxygen, a second base containing oxygen, and the third base containing no oxygen and no nitrogen are exposed on a surface of the substrate; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate after the protective film is formed on the surface of the third base; and (c) selectively forming a film on a surface of the first base by supplying a film-forming gas to the substrate after the surface of the second base is modified.

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Toyama, Japan

Motomu Degai